DFLS1100Q-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	860mV @ 2A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1µA @ 100V
Capacitance @ Vr, F:	36pF @ 5V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	POWERDI®123
Supplier Device Package:	PowerDI™ 123
Operating Temperature - Junction:	-55°C ~ 175°C

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Introduction to DFLS1100Q-7

The DFLS1100Q-7 is a fast recovery, shottky rectifier designed for automotive, telecom, computer and industrial applications. This fast-recovery rectifier has a forward current rating of 1.5A, a reverse voltage of 100V, a fast soft-recovery time of 1.5μs maximum, and a Vf of 0.32V at IF = 1.5A. It is housed in a SMA package with leads, offering superior thermal and electrical performance.

Application Field and Working Principle of DFLS1100Q-7

As a fast-recovery, shottky rectifier, the DFLS1100Q-7 is ideal for a variety of applications. It can be used as a high-current recifier in applications such as automotive, telecom, and computer power converters, which require high-speed switching and low forward voltage drop. Furthermore, it is also suitable for use in industrial power supplies, such as welding machines, battery chargers, and voltage regulator circuits.The working principle of the DFLS1100Q-7 is based on the fact that when a P-N junction diode is in equilibrium, a potential barrier is created between the two regions. This potential barrier creates an electric field that causes current to flow in one direction only. All rectifiers, including the DFLS1100Q-7, make use of this principle to convert AC to DC. In this device, the N-region is an isotropic layer which increases the electric field and reduces the turn-on time of the diode, allowing it to switch faster while allowing a lower forward voltage drop. In addition, the use of a shottky barrier further increases the forward voltage drop and the speed. A Schottky barrier diode is made up of a metal–semiconductor junction instead of a P–N junction, and is much less resistive than a P–N junction diode. This in turn reduces the forward current drop and increases the speed of the device.

Conclusion

The DFLS1100Q-7 is a fast-recovery, shottky rectifier designed for a variety of applications, such as automotive, telecom, computer, industrial power supplies, and voltage regulator circuits. It features a low forward Vf of 0.32V at IF = 1.5A and a fast soft-recovery time of 1.5μs maximum. In order to achieve its fast recovery and low forward voltage, the DFLS1100Q-7 makes use of an isotropic layer, as well as a Schottky barrier instead of the traditional P–N junction.

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