DFLT20A-7 Circuit Protection

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TVS diodes are basically used for two primary applications, ESD protection and electrical overstress (EOS) protection. A TVS diode is a solid state device which has an intrinsic ability to snap-off the abnormal voltage that is applied to the protected line. The TVS diode is commonly used in various industrial, consumer electronics and other electronic systems for protection from high voltage transients. The DFLT20A-7 is a specific type of transient voltage suppression diode that is designed to limit inrush current and ESD stress. It is commonly available in three different case sizes such as SOD123F, SOD923 and SC-76. This article discusses the application of the DFLT20A-7 in different scenarios and the working principle of the device.

Application of DFLT20A-7

The DFLT20A-7 is widely used in various industrial and consumer electronic systems. It is a popular device for transient voltage suppression applications in low voltage systems such as home appliances, automotive, computers, communication systems, medical electronics and telecommunication circuits. This device is also used in applications where limited capacitance (C_L = 8pf) and fast response time, (trr = 4ns) are vital. The DFLT20A-7 is often used in ESD protection circuits where it has excellent Electro-Static Discharge (ESD) protection capabilities (with ratings up to 8kV). It is also used in surge suppressors to protect against overvoltage transients caused by power surges. The device is also used in high current circuits where it can protect the sensitive components from overcurrent.

Working Principle of the Device

The DFLT20A-7 is an Avalanche breakdown type TVS diode which has a low leakage current. The device is a shear-off type of diode, meaning that when the voltage applied to the device exceeds a certain level, the diode\'s junction will break down and snap off the voltage. The device features a low capacitance of 8pF which helps to achieve fast response times to transient surge currents and protect against transient overvoltage.

The working principle of the diode largely depends on its semiconductor junction which is composed of p-type and n-type material (usually Silicon). Under normal operating conditions, the forward voltage applied to the diode will cause a small amount of current to flow through the device. However, when the voltage increases beyond the threshold level of the diode, the small current will cause a rapid increase in the depletion region of the diode, causing it to break down and snap off the voltage. This avalanche breakdown enables the diode to quickly react to transient surge currents and quickly limit the applied voltage to a safe level.

Conclusion

The DFLT20A-7 is an ultra-fast TVS diode which is designed for ESD and EOS protection. Its low capacitance and fast response time makes this device ideal for a variety of consumer and industrial applications which require protection from voltage or current anomalies. It is a popular choice for its excellent Electro-Static Discharge (ESD) protection capability with ratings up to 8kV. The device works on the principle of Avalanche breakdown of its silicon junction which causes it to rapidly react to transient surge currents and quickly limit the applied voltage to a safe level.

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