DGP20HE3/54

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1500V
Current - Average Rectified (Io):	2A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 2A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	20µs
Current - Reverse Leakage @ Vr:	5µA @ 1500V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	DO-204AC, DO-15, Axial
Supplier Device Package:	DO-204AC (DO-15)
Operating Temperature - Junction:	-65°C ~ 175°C

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Introduction

DGP20HE3/54, also known as “Low Voltage Rectifier Diode”, is manufactured by Qunxing Electronics Co., Ltd, a global leader in semiconductor industry. It is a current-controlled, low voltage rectifier diode with an optimized architecture, which offers multiple advantages in the applications field, from the components redundancy, extended forward and reverse conduction current, and improved reliability and lifetime.

Application Field

DGP20HE3/54 Rectifier Diode is suitable for use in high temperature, high voltage and high frequency applications, such as switching power supplies, DC-to-DC converters, voltage multipliers, transient voltage suppressor (TVS) and EMI noise filters, as it is able to limit the switching voltage thereby reducing energy losses associated with intermittent devices. It is also used in applications such as high-voltage designs requiring active recovery of breakdowns and pre-bias position. It is particularly suitable for LED lighting systems and automotive devices. The rectifier diode is designed with very high junction temperature operating at a maximum of 175 ˚C and maximum forward voltage rating of 30V, making it suitable for high power applications requiring superior performance. The diode also utilizes a thin film composite construction technology that effectively provides double routing in multiple directions to increase the current flow and reduce potentially negative effects caused by power circuits.

Working Principle

The DGP20HE3/54 is a current-controlled rectifier diode that utilizes a unique thin film composite construction technology to limit switching voltage. It uses a PN junction where the negative minority carriers drift from the n-type material to the p-type material. This forms a barrier that can be thought of as a “backflow diode”. When the PN junction is forward biased, the voltage at the junction drops and forms an electric field that accelerates electrons and holes toward each other. The resulting current increases exponentially, allowing faster reverse recovery time with lower voltage. When the junction is reversed biased, the electric field is strong enough to push electrons and holes away from each other. This screens the junction from forward current and prevents the reverse flow of electrons, thus blocking reverse current from reaching the power source. In addition, the diode also features a number of other benefits like current capacity, high reliability, low thermal resistance, and tight component tolerance. These features enable DGP20HE3/54 to provide improved performance and operational stability.

Conclusion

The DGP20HE3/54 rectifier diode is designed with a thin film composite construction and handles a wide temperature range (up to 175 ˚C), a high forward voltage rating (30V), and a wide range of operating frequencies. It is ideal for high power switching applications in circuit boards and various power-related systems requiring superior performance, such as LED lighting systems and automotive devices, and the like.

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