Allicdata Part #: | DGP30HE3/54-ND |
Manufacturer Part#: |
DGP30HE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 1.5KV 3A DO201AD |
More Detail: | Diode Standard 1500V 3A Through Hole DO-201AD |
DataSheet: | DGP30HE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1500V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 20µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1500V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | DGP30 |
Description
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The DGP30HE3/54 is a silicon epitaxial-base Planar PNP Transistor and is an excellent choice for many applications in diodes, rectifiers, and single-level devices. This device, known as a single-level device, is composed of two series-connected “plates” with a bandgap structure, and is capable of conducting alternating current in either direction. The DGP30HE3/54, when properly designed and engineered, has the capacity to meet a variety of application requirements. This product can be used in multi-level devices where more than one level of voltage is required. These types of products are normally used in applications such as switching power supplies, battery chargers, and motor and solenoid control circuits.As far as the single-level application go, the DGP30HE3/54 can be used for various different types of rectification. The device can be utilized for half-wave, full-wave and bridge rectification, allowing for a wide range of application options. The basics of this type of device are it is made of two series-connected plates, which overlay to form an intrinsic bandgap structure that provides the rectifying capabilities. The bandgap limits the amount of current that can flow in one direction, while allowing current to flow in the opposite direction. These plates are connected to other components to form the rectifying circuit. When it comes to the working principle of the DGP30HE3/54, it is based on the reverse biasing of a p-type diode on the n-type diode. In a forward biasing configuration, a diode allows electric current to flow in one direction, while in reverse biasing, it will not allow an electric current to flow. When reverse biasing is applied to the DGP30HE3/54, an internal electric field is created. This field is then used to inhibit conduction of electric current from one side of the device to the other. As the voltage across each side of the device increases, the electric field caused by the reverse bias increases as well. This allows for more precise regulation of electric current flow, and results in improved control of the device. In addition to its application in single-level devices, the DGP30HE3/54 can be used as part of a multi-level rectification system as well. With a multi-level rectification system, several diodes can be arranged in parallel to form a bridge rectifier, with each of the levels being individually regulated by a separate diode. By using this type of system, the user can achieve increased control over their device and its output. Overall, the DGP30HE3/54 can be used in a variety of applications, and offers excellent performance when used correctly. It is an ideal choice for multi-level rectification, as well as single-level applications, and can provide precise current regulation. Therefore, it is an excellent choice for a variety of device designs.
The specific data is subject to PDF, and the above content is for reference
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