DGSS10-06CC Allicdata Electronics
Allicdata Part #:

DGSS10-06CC-ND

Manufacturer Part#:

DGSS10-06CC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: DIODE ARRAY SCHOTTKY 600V 25A
More Detail: Diode Array 1 Pair Series Connection Schottky 600V...
DataSheet: DGSS10-06CC datasheetDGSS10-06CC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 25A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 10A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 23ns
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Supplier Device Package: ISOPLUS220™
Description

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The DGSS10-06CC is a semiconductor component that is used in a range of applications. It is an N-Channel MOSFET and it is part of the Diode5 and Rectifiers5 arrays from Diodes Incorporated. The DGSS10-06CC can be used in a range of applications from low power to high power applications.

In general, the DGSS10-06CC is used for switching applications. It can be used to control loads from 6A up to 10A. It is also used in power converters, power supplies, and DC-DC converters. It can also be used for controlling and switching of PWM regulators and for high voltage applications like in automotive electronics.

The DGSS10-06CC is a Single N-Channel Mosfet with a low voltage on-state resistance. It has good drain-to-source isolation, good thermal stability, and a maximum breakdown voltage of 10V. It also features a three-state package.

The DGSS10-06CC has some unique features that make it ideal for use in high power switching applications. It features a low gate-channel capacitance which allows it to handle high surge currents and high switching frequencies. It also has a low on-state resistance which helps to reduce power dissipation. It also has a low gate charge which helps to reduce switching losses.

The working principle of the DGSS10-06CC is simple. It is a voltage driven device. When the voltage applied to the gate is the same or higher than the turn-on voltage threshold, the MOSFET will be in the on-state and a current will flow from source to drain. When the voltage applied to the gate is lower than the turn-off voltage threshold, the MOSFET will be in the off-state and no current will flow from source to drain.

The DGSS10-06CC is a rugged, high power component that is ideal for use in high current applications. It can be used in automotive, consumer electronics, and industrial applications. It is a reliable component that is suitable for many applications and is easy to use.

The specific data is subject to PDF, and the above content is for reference

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