Allicdata Part #: | DHG50X1200NA-ND |
Manufacturer Part#: |
DHG50X1200NA |
Price: | $ 13.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | DIODE MODULE 1.2KV 25A SOT227B |
More Detail: | Diode Array 2 Independent Standard 1200V 25A Chass... |
DataSheet: | DHG50X1200NA Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 11.95740 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Configuration: | 2 Independent |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io) (per Diode): | 25A |
Voltage - Forward (Vf) (Max) @ If: | 2.12V @ 25A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 50µA @ 1200V |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
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Diodes - Rectifiers - Arrays represent a major class of power supply components. They are used to convert AC input power into DC output power, thus forming the foundation of modern power supply technology. The DHG50X1200NA is a typical example of such a component, used in a wide range of applications to provide reliable and efficient power conversion. This article will discuss the application field and working principle of the DHG50X1200NA.
The DHG50X1200NA is designed for use as a general-purpose rectifier diode array. It can be used in a range of applications, such as motor control systems, CFL inverters, switching power supplies, LED drivers and other high-frequency DC-DC converters. It is characterized by low forward voltage drop, low reverse current, low reverse leakage current, low leakage power dissipation and excellent surge current capability. This makes it suitable for a wide range of switch-mode power supplies and other high-frequency applications.
The working principle of the DHG50X1200NA is fairly simple. It consists of two p-type and two n-type semiconductor layers. The two p-type layers are connected in series, forming the anode and cathode of the diode, while the two n-type layers are connected in parallel to form the gate. When the gate receives a positive voltage, it conducts current between the anode and cathode, allowing for power conversion. Alternatively, when the gate is reverse biased, the diode blocks current flow, entering a “reverse blocking” or “off” state. This allows for efficient power conversion from AC to DC.
Due to its small size and efficient design, the DHG50X1200NA is an ideal choice for a wide range of applications requiring high-quality power conversion. It is available in a variety of packages, including the industry standard SOIC-8. This makes the DHG50X1200NA a very versatile component, suitable for use in a wide range of microcontroller-based, high-frequency applications. In addition, the low forward voltage drop and low reverse current of the diode make it an excellent choice for designing power efficient circuits.
In summary, the DHG50X1200NA is an excellent choice for a wide range of applications requiring high-quality power conversion. Its small size, low forward voltage drop and low reverse current make it an ideal choice for microcontroller-based, high-frequency applications. Its working principle is based on the classic p-n junction diode, which allows for efficient power conversion from AC to DC. With its wide range of packages and versatile design, the DHG50X1200NA is sure to find a home in many of today’s high-performance electronic designs.
The specific data is subject to PDF, and the above content is for reference
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