DJT4030P-13 Allicdata Electronics

DJT4030P-13 Discrete Semiconductor Products

Allicdata Part #:

DJT4030PDITR-ND

Manufacturer Part#:

DJT4030P-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 40V 3A SOT-223
More Detail: Bipolar (BJT) Transistor PNP 40V 3A 150MHz 1.2W Su...
DataSheet: DJT4030P-13 datasheetDJT4030P-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Power - Max: 1.2W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: DJT4030
Description

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Bipolar junction transistors, or BJTs, are widely used semiconductor devices due to their ability to rapidly switch electric currents and power supply signals. The DJT4030P-13 is a bipolar junction transistor that is suitable for a wide range of applications in areas such as automotive, medical, industrial and consumer electronics. This transistor has low collector-emitter saturation voltage, low threshold voltage, fast turn-off characteristic, low noise and is particularly suited for Class D amplifier output stages.This transistor has a PNP (Positive-Negative-Positive) construction, which means that it is composed of two P-type semiconductor layers separated by a N-type layer. The two P-type semiconductor layers form the collector and the emitter and the N-type layer forms the base. The collector and emitter are both connected to the external circuit, while the base is connected to a control signal or voltage.When a DC bias current is applied to the transistor, the P-type material accumulates majority carriers, while the N-type material accumulates minority carriers. This creates a voltage defined by the base-emitter characteristics, which causes current to flow across the junction. This current is known as the collector current and is controlled by the bias current applied to the base. The amount of collector current flowing across the junction is determined by the gain of the transistor. This is defined as the ratio of collector current to the base current, and is referred to as the β-factor. The higher the β-factor of a transistor, the higher the current gain and the better it is for high current switching applications. The DJT4030P-13 has a high β-factor, making it an ideal transistor for high current switching applications.The switching speed of the transistor is determined by its turn-off time (or storage time). This is the time required for the transistor to turn off after the base current is removed. This time is considerably shorter for transistors with a shorter turn-off time. The DJT4030P-13 has a very short turn-off time, which makes it suitable for high speed switching applications.The DJT4030P-13 can be used for a wide range of applications, such as switching circuits, amplifier and switching power supplies, and audio amplifiers. Due to its high current gain, low saturation voltage and fast turn-off time, the DJT4030P-13 is an ideal choice for these applications.In conclusion, the DJT4030P-13 is a versatile and reliable bipolar junction transistor that can be used for a variety of applications, such as switching circuits, amplifier and switching power supplies and audio amplifiers. It has a high β-factor, low saturation voltage and fast turn-off time, making it the perfect choice for high current switching applications.

The specific data is subject to PDF, and the above content is for reference

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