Allicdata Part #: | DLE30C-KC9-ND |
Manufacturer Part#: |
DLE30C-KC9 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 200V 3A AXIAL |
More Detail: | Diode Standard 200V 3A Through Hole Axial |
DataSheet: | DLE30C-KC9 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 980mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | 150°C (Max) |
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Diodes are essential electronic components used in many electronics systems to regulate voltage and prevent current flow in the wrong direction. The DLE30C-KC9 is a single rectifier diode, used for a variety of applications. This article will discuss the application field and working principle of the DLE30C-KC9.
The DLE30C-KC9 is a 30 V, 400 mA rectifier diode with a Power Dissipation of 720 mW. It is an ultra-fast, low-voltage, low-power rectifier diode. It is well-suited for high-frequency applications due to its high-switching speed and low-recovery time. It can also be used in motor control circuits, AC/DC converters, and other rectifier applications.
Its low-voltage and low-power capabilities make it ideal for applications such as LED lighting, automotive electronics, and industrial equipment. It can also be used in applications requiring protection from excessive input voltages, such as in power supply circuits. The DLE30C-KC9 also has low operating temperature, which makes it well-suited for high temperature applications.
The DLE30C-KC9’s working principle is based on the PN junction. A PN junction is created when a barrier of semi-conducting materials is formed in between two materials - an n-type and a p-type. When a voltage is applied across the junction, electrons from the n-type material are forced to cross the barrier and into the p-type material, creating a current flow. The amount of current that can flow is determined by the voltage applied to the junction and the type of materials used.
The DLE30C-KC9 has a high forward voltage drop. This is due to its low-voltage capability, which allows it to block reverse current in the off-state but still pass a large current when forward biased. The reverse voltage breakdown is also higher due to the low-voltage capability of the diode. This allows it to withstand high levels of reverse voltage without breaking down.
The DLE30C-KC9 is also designed to minimize reverse recovery time. The diode has a low-junction capacitance, which reduces the time required for the diode to return to its forward-biased state after it has been switched to its reverse-biased state. This helps to reduce power dissipation and minimize system downtime, and makes the diode more efficient overall.
In conclusion, the DLE30C-KC9 is a single rectifier diode, well-suited for a variety of applications. Its high-switching speed, low-recovery time, and low-voltage and -power capabilities make it ideal for high-frequency and low-voltage applications such as LED lighting, motor control circuits, and industrial equipments requiring protection from excessive input voltages. Its working principle is based on the PN junction, and it has a high forward voltage drop and low reverse recovery time, making it more efficient overall.
The specific data is subject to PDF, and the above content is for reference
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