DM80-01-1-9220-3-LC Allicdata Electronics
Allicdata Part #:

DM80-01-1-9220-3-LC-ND

Manufacturer Part#:

DM80-01-1-9220-3-LC

Price: $ 0.00
Product Category:

Optoelectronics

Manufacturer: Finisar Corporation
Short Description: LASER DIODE 1560NM 13-BUTTERFLY
More Detail: Laser Diode 1560nm 5.011mW 1.8V 100mA 13-Butterfly
DataSheet: DM80-01-1-9220-3-LC datasheetDM80-01-1-9220-3-LC Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Wavelength: 1560nm
Moisture Sensitivity Level (MSL): --
Voltage - Input: 1.8V
Current Rating: 100mA
Power (Watts): 5.011mW
Package / Case: 13-Butterfly
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Laser Diodes, Modules are essential components in modern life for many different types of applications ranging from medical research to industrial applications. The DM80-01-1-9220-3-LC is one such component that can enable a wide variety of tasks.

The DM80-01-1-9220-3-LC is a high power laser diode with an emission wavelength around 940 nm. It is a robust, small-size and lightweight device that is designed for use for medical, industrial, and research purposes. The semiconductor laser diode offers a good performance in a wide range of applications.

Applications

The applications of the DM80-01-1-9220-3-LC can be broadly divided into three main categories. The first category is medical applications such as dermatological therapy, microsurgery, and endoscopy. The second category is industrial applications such as material processing, soldering, and fiber-optic communication. The third category is research applications such as spectroscopy, imaging, and Raman spectroscopy.

Working Principle

The basic principle behind the operation of the DM80-01-1-9220-3-LC is the conversion of electrical energy into laser light. The laser diode contains a semiconductor material (usually gallium arsenide) which consists of two layers. The first layer is an N-type region which has an excess of electrons, and the second layer is a P-type region which has an excess of holes. When a current passes through the device, electrons from the N-type layer jump across the junction to fill the holes in the P-type layer. This causes a photon to be emitted when the electrons and holes recombine. This photon is then amplified and focused through a lens which emits a narrow, low-power beam. The output power can be increased by using larger lenses and more optical elements.

The DM80-01-1-9220-3-LC is a high-power laser diode which is suitable for a wide range of applications. It is a reliable, small, and lightweight device that offers a good performance. The device uses the principle of conversion of electrical energy into laser light to generate a focused quality of laser beam with adjustable power levels. The applications of the DM80-01-1-9220-3-LC range from medical to industrial to research purposes.

The specific data is subject to PDF, and the above content is for reference

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