
Allicdata Part #: | DMA30E1800HA-ND |
Manufacturer Part#: |
DMA30E1800HA |
Price: | $ 2.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | DIODE GEN PURP 1800V 30A TO247 |
More Detail: | Diode Standard 1800V 30A Through Hole TO-247 |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 1.81587 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1800V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 30A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 40µA @ 1800V |
Capacitance @ Vr, F: | 10pF @ 400V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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DMA30E1800HA is a new single rectifier diode that is widely used in high power electronics applications. It’s part of the 30E series of products, which is a 120V high current rectifier family comprised of the DMA30E2700HA and DMA30E1800HA.
DMA30E1800HA is a single fast recovery, 1000V power rectifier. It has an Avalanche voltage rating of 1500V and a maximum reverse DC voltage of 1800V. These features make DMA30E1800HA a robust product for use in harsh industrial, electronic, and automotive applications.
In terms of its application field, DMA30E1800HA is suitable for high voltage DC to DC converters, power supply Equipment, UPS systems, and telecom systems. Increased insulation resistance and avalanche breakdown characteristics of the diode make it suitable for all the above-mentioned applications.
The working principle of DMA30E1800HA is based on the PN junction. It consists of two semiconductor layers that are connected to one another, with one layer being positively charged and the other being negatively charged. When a voltage is applied to the PN junction, electrons flow from one layer to the other. When these electrons land on the positively charged layer, they become holes, which are positively charged particles. These holes will then be attracted to the negatively charged layer and become electrons, thus creating a current flow through the PN junction.
DMA30E1800HA also has a built-in avalanche junction, which makes it more suitable for high voltage applications. It provides fast avalanche response and the ability to withstand high avalanche breakdown levels. This diode also features low leakage current and minimal forward voltage drop, which increases efficiency and improves power output.
Overall, DMA30E1800HA has a wide range of applications and provides reliable performance. Its fast recovery, high voltage and avalanche breakdown ratings make it suitable for use in high voltage DC to DC converters, power supply Equipment, UPS systems, and telecom systems. It also provides low leakage current and minimal forward voltage drop, which makes it an ideal solution for efficient and reliable power conversion.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DMA30E1800HA | IXYS | 2.02 $ | 1000 | DIODE GEN PURP 1800V 30A ... |
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