Allicdata Part #: | DMC904010RTR-ND |
Manufacturer Part#: |
DMC904010R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS 2NPN 50V 0.1A SSMINI6 |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 10... |
DataSheet: | DMC904010R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 210 @ 2mA, 10V |
Power - Max: | 125mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SSMini6-F3-B |
Base Part Number: | DMC90401 |
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DMC904010R are arrays of eight NPN Darlington transistors. This type of transistor is designed to isolate electrical switching applications. The transfer of electrical power through the transistor is through the accumulation of charges in the substrate junction region of the transistor. Electrical charge carriers are electrons and holes. The transistors are joined together in the form of an array and the electrical charges can flow through the array in both directions. The current carrying capability of the Darlington array is greater than the single transistor and hence provides increased current capacity.
The Darlington array is suitable for a variety of applications such as line drivers, H-bridge and low level analog switches. They are used in the applications of engine control units, relays and opto-isolated systems and power electronics. The DMC904010R is particularly suitable for stepping applications, where a large increase in current capacity is required.
The working principle of a Darlington array is quite simple. The base-emitter junction of one transistor acts as the collector of the second one. This provides a voltage gain, which is higher than that from a single transistor. As the current flows from the collector to the emitter of the second transistor, the second transistor will increase the output current.
The current gain of a Darlington array depends on the current at the base of the first transistor and the current passing through the first transistor. The gain can be calculated by multiplying the current passing through the first transistor with the current at the base. Therefore, in a given application, a larger gain is obtained when the base current is higher.
When the Darlington array is used in power electronics applications, the higher current capacity is useful in providing high speed switching of the load. Moreover, the array can be used in power applications and the output current can be controlled easily.
In addition, the Darlington array has low voltage drop between the collector and the emitter, which is an advantage for switching applications. This is because it reduces the amount of energy lost in the form of heat.
The DMC904010R array is suitable for high power applications and its output current can be controlled to switch the load efficiently. The high current gain of the array allows for increased current capacity and hence provides better control in switching applications.
The specific data is subject to PDF, and the above content is for reference
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