DMJT9435-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMJT9435-13 is a general-purpose NPN medium-power bipolar junction transistor that is ideal for small-signal amplification, mixer, and oscillator applications. It has an excellent high-frequency response and can handle output powers up to 30 W. This BJT is a single-transistor type and has a maximum collector-emitter voltage of 80 V and a maximum collector-base voltage of 120 V. It has a maximum collector current of 10 A and a maximum collector-emitter saturation voltage of 250 mV. 
The application field and working principle of the DMJT9435-13 is typical for a bipolar junction transistor. As a NPN type, it has a basic construction with three regions – an emitter, a base and a collector. When bias current is applied, minority carriers are injected from the emitter into the base. These minority carriers then recombine with the majority carriers in the collector. The operation of the BJT is thereby controlled by the amount of current that is passed between the base and the collector. The gain of a BJT depends on the current-control characteristics of the transistor’s base-to-collector region. 
The DMJT9435-13 is primarily used for small-signal amplification and switching applications, such as those found in audio circuits. Its high-frequency response and maximum output power of 30 W make it well-suited for radio frequency applications. Its excellent collector-to-emitter saturation voltage and low collector-to-base leakage current render it suitable for current sensing and temperature controlling. Additionally, it also works well in timed circuits, such as timers and oscillators. 
Bipolar junction transistors are versatile and reliable devices that are used in a wide variety of applications. The DMJT9435-13 is a general-purpose NPN BJT designed for medium power output and can be used for many different small-signal amplification and switching applications. Its high-frequency response and 30 W output power make it an excellent choice for RF applications, while its low collector-to-base leakage current and excellent collector-to-emitter saturation voltage render it suitable for current sensing and temperature controlling. 

The specific data is subject to PDF, and the above content is for reference