DMR935E10R Allicdata Electronics
Allicdata Part #:

DMR935E10RTR-ND

Manufacturer Part#:

DMR935E10R

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANSISTOR PNP 20V SSMINI6-F3-B
More Detail: Transistor CCD Output Circuits PNP, N-Channel 20V ...
DataSheet: DMR935E10R datasheetDMR935E10R Datasheet/PDF
Quantity: 1000
8000 +: $ 0.09160
16000 +: $ 0.08528
24000 +: $ 0.08423
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP, N-Channel
Applications: CCD Output Circuits
Voltage - Rated: 20V
Current Rating: 50mA
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B
Base Part Number: DMR935E1
Description

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The DMR935E10R is a special purpose transistor, a type of semiconductor device capable of amplifying or switching electronic signals. It is part of a larger family of similar devices known as metal-oxide-semiconductor field-effect transistors (MOSFETs). Its specific characteristics, such as its relatively high current gain and tiny package, make it well suited for different applications, from digital logic circuits to analog amplifiers. In this article, we will discuss the DMR935E10R\'s common application fields and its working principle. The DMR935E10R is a small signal field-effect transistor (FET) used primarily as an amplifier or switch in a wide range of applications. It is commonly used in digital logic circuits, where it helps switch an electronic signal on and off at a rapid pace. It is also commonly used in analog amplifiers, where it provides a high current gain. The device\'s small size makes it well suited for use in mobile devices and other compact electronic circuits, and its high current gain makes it well suited for amplifying low level signals. The DMR935E10R is a N-channel device, meaning that it has three terminals, an nFET (source), a pFET (gate) and a vFET (drain). These terminals are responsible for controlling the flow of electrons through the transistor. When the gate terminal is given a positive voltage, electrons flow from the source to the drain. When the gate terminal is given a negative voltage, electrons are prevented from flowing from the source to the drain. The amount of current flowing from the source to the drain depends on the magnitude of the voltage applied to the gate. The higher the voltage, the more electrons can flow from the source to the drain. The working principle of the DMR935E10R can be broken down into three main components: the source, gate and drain. The source is the terminal from which electrons flow into the transistor, the gate controls the amount of current flowing through the transistor, and the drain is the terminal from which electrons are emitted. The source and gate are connected to a voltage source. When a voltage is applied to the gate, it controls the amount of current flowing through the channel between the source and drain. The more positive the voltage applied to the gate, the more current that flows. The principle works in reverse too, with a negative voltage causing the decrease of current flow. In summary, the DMR935E10R is a special purpose transistor used primarily as an amplifier or switch in a wide range of applications. It is a N-channel device, meaning it can be used for both switching and amplifying. Its small size and high current gain make it well suited for mobile devices and other compact electronic circuits, and its ability to switch or amplify low level signals makes it a popular choice for a variety of applications. The working principle of the device can be broken down into its three main components, the source, gate and drain, which control the flow of electrons into, out of and through the transistor.

The specific data is subject to PDF, and the above content is for reference

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