DNBT8105-7 Allicdata Electronics

DNBT8105-7 Discrete Semiconductor Products

Allicdata Part #:

DNBT8105DITR-ND

Manufacturer Part#:

DNBT8105-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 60V 1A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 150MHz 600mW S...
DataSheet: DNBT8105-7 datasheetDNBT8105-7 Datasheet/PDF
Quantity: 99000
Stock 99000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 600mW
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: DNBT8105
Description

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The DNBT8105-7 is a single bipolar junction transistor, commonly referred to as a BJT. This component plays an important role in many different types of circuits, most notably in amplifiers and switches. It is widely used in a variety of applications, from consumer electronics to automotive and industrial systems.

Applications

The DNBT8105-7 is most commonly used as an amplifier in audio circuits and other electronic equipment, such as radios and televisions. It can also be used as a switch in both digital and analog circuits. It is most commonly used in applications such as voltage regulation, current sensing, and powering LEDs. It can also be used as an amplifier in oscillator circuits, providing reliable, stable signals.

Working Principle

The working principle of a BJT is relatively straightforward. It consists of a three-layered semiconductor material with two p-type and one n-type layer. The two p-type layers are the “base” and the “collector”. The n-type layer is the “emitter”. When a voltage is applied between the base and the emitter, current can flow from the emitter to the collector. This current flow can be controlled by adjusting the applied voltage.

For the DNBT8105-7, the collector-emitter voltage is 0.6 - 0.8V, and the current gain is 40 to 160. It has a low base-emitter saturation voltage of 0.5V and is rated at a maximum collector current of 1.0A. It is also able to withstand a maximum power dissipation of 24W.

Conclusion

The DNBT8105-7 is an important component in a wide range of applications. Its simple construction and relatively low current gain makes it ideal for many different types of circuits, from audio amplifiers to LED lighting. It is also capable of withstanding significant amounts of power, making it suitable for high-power devices. Its simple working principle means that it is easy to set up and use in any circuit.

The specific data is subject to PDF, and the above content is for reference

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