DNLS160V-7 Allicdata Electronics

DNLS160V-7 Discrete Semiconductor Products

Allicdata Part #:

DNLS160VDITR-ND

Manufacturer Part#:

DNLS160V-7

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 60V 1A SOT-563
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 270MHz 300mW S...
DataSheet: DNLS160V-7 datasheetDNLS160V-7 Datasheet/PDF
Quantity: 3000
1 +: $ 0.08000
10 +: $ 0.07760
100 +: $ 0.07600
1000 +: $ 0.07440
10000 +: $ 0.07200
Stock 3000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Power - Max: 300mW
Frequency - Transition: 270MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: DNLS160
Description

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The DNLS160V-7 is a single-ended NPN bipolar transistor used in various circuits and devices. It has a low noise figure, low gate leakage, and excellent stability. The switching characteristics are excellent, with minimal thermal runaway and safe operating area characteristics. The DNLS160V-7 is also capable of handling a wide range of input and output voltages.

In terms of its application field, the DNLS160V-7 is most commonly used in audio amplifiers, power switching circuits, and general-purpose power supplies. It can also be used in applications where low noise and high frequency accuracy are required, such as in communications and precision test equipment. In addition, the DNLS160V-7 has a wide range of applications for RF circuits, including RF and microwave amplifiers, oscillators, filters, transceivers, and power management.

The working principle of the DNLS160V-7 is based on the operation of a normal NPN bipolar transistor. The collector-emitter terminal corresponds to the drain, while the base-emitter terminal corresponds to the gate of a MOSFET. In normal PNP bipolar transistors, the current flows from emitter to collector. However, in the DNLS160V-7 the direction of current flow is reversed. This means that when a voltage is applied between the base and emitter, it is actually controlling the current flowing from collector to emitter.

This reversed current flow allows the DNLS160V-7 to be used in applications where extremely low noise and high accuracy are required. Also, the relatively low on-resistance and linear characteristics of the DNLS160V-7 make it ideal for use in power switching applications. The device also has excellent stability over temperature.

In conclusion, the DNLS160V-7 is a single-ended NPN bipolar transistor suitable for a wide range of applications where low noise and high precision is required. It has excellent switching characteristics, low gate leakage, and a wide range of input and output voltage capability. Also, it is capable of handling a wide range of input and output voltages and has a low thermal runaway characteristic. In addition, the DNLS160V-7 has a linear characteristics along with excellent stability over temperature, which makes it suitable for use in power switching applications. Therefore, the DNLS160V-7 is a suitable device for many different applications.

The specific data is subject to PDF, and the above content is for reference

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