
DNLS160V-7 Discrete Semiconductor Products |
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Allicdata Part #: | DNLS160VDITR-ND |
Manufacturer Part#: |
DNLS160V-7 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 1A SOT-563 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 1A 270MHz 300mW S... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.08000 |
10 +: | $ 0.07760 |
100 +: | $ 0.07600 |
1000 +: | $ 0.07440 |
10000 +: | $ 0.07200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 270MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-563 |
Base Part Number: | DNLS160 |
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The DNLS160V-7 is a single-ended NPN bipolar transistor used in various circuits and devices. It has a low noise figure, low gate leakage, and excellent stability. The switching characteristics are excellent, with minimal thermal runaway and safe operating area characteristics. The DNLS160V-7 is also capable of handling a wide range of input and output voltages.
In terms of its application field, the DNLS160V-7 is most commonly used in audio amplifiers, power switching circuits, and general-purpose power supplies. It can also be used in applications where low noise and high frequency accuracy are required, such as in communications and precision test equipment. In addition, the DNLS160V-7 has a wide range of applications for RF circuits, including RF and microwave amplifiers, oscillators, filters, transceivers, and power management.
The working principle of the DNLS160V-7 is based on the operation of a normal NPN bipolar transistor. The collector-emitter terminal corresponds to the drain, while the base-emitter terminal corresponds to the gate of a MOSFET. In normal PNP bipolar transistors, the current flows from emitter to collector. However, in the DNLS160V-7 the direction of current flow is reversed. This means that when a voltage is applied between the base and emitter, it is actually controlling the current flowing from collector to emitter.
This reversed current flow allows the DNLS160V-7 to be used in applications where extremely low noise and high accuracy are required. Also, the relatively low on-resistance and linear characteristics of the DNLS160V-7 make it ideal for use in power switching applications. The device also has excellent stability over temperature.
In conclusion, the DNLS160V-7 is a single-ended NPN bipolar transistor suitable for a wide range of applications where low noise and high precision is required. It has excellent switching characteristics, low gate leakage, and a wide range of input and output voltage capability. Also, it is capable of handling a wide range of input and output voltages and has a low thermal runaway characteristic. In addition, the DNLS160V-7 has a linear characteristics along with excellent stability over temperature, which makes it suitable for use in power switching applications. Therefore, the DNLS160V-7 is a suitable device for many different applications.
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