Allicdata Part #: | DP0150BDJ-7-ND |
Manufacturer Part#: |
DP0150BDJ-7 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2PNP 50V 0.1A SOT963 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 10... |
DataSheet: | DP0150BDJ-7 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.06632 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-963 |
Supplier Device Package: | SOT-963 |
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The DP0150BDJ-7 is an array of bipolar transistors with a plethora of potential applications in a wide range of markets. It is a metal oxide semiconductor field effect transistor, or MOSFET, which uses metal oxide and an ultra thin gate insulator to allow segmented control of current and voltage. This makes the DP0150BDJ-7 an excellent choice for applications such as power management, analog and digital circuit design, and automotive systems.
The DP0150BDJ-7 has several exceptional features which set it apart from other transistors and arrays. First, its dynamic thermal characteristics allow for improved temperature control like few other transistors. It also has a high common-mode rejection ratio of 65 dB, which ensures improved noise performance and amplification. The maximum drain-source resistance on the device is also relatively low, making it a good choice for switching circuits.
The basic operating principle of the DP0150BDJ-7 is based on the same principle as any other bipolar transistor. When the gate is activated by a positive voltage, current is allowed to flow through the transistor\'s source and drain. This flow of current can then be amplified and used to control other circuits. By applying a negative voltage to the gate, the current is stopped and the transistor is effectively shut off.
The main advantages of using the DP0150BDJ-7 over its predecessors are improved power management, better controlled temperature, lower drain-source resistance, and improved rejection of noise and interference. Its operating temperature range is much wider than its predecessors, making it suitable for a wide range of uses. Moreover, its low power ratings and relatively low cost make it an attractive option for many electronics engineers.
The DP0150BDJ-7 is an ideal choice for many applications, from automotive systems to power management or circuit design. Its superior power management capabilities, temperature control and low drain-source resistance make it a great choice for many electronic projects. Its wide operating temperature range also makes it an ideal fit for any environment, and its low cost makes it an attractive option for many engineers.
The specific data is subject to PDF, and the above content is for reference
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