DPG60C300HJ Allicdata Electronics
Allicdata Part #:

DPG60C300HJ-ND

Manufacturer Part#:

DPG60C300HJ

Price: $ 3.80
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: DIODE ARRAY 300V 30A ISOPLUS147
More Detail: Diode Array 1 Pair Common Cathode Standard 300V 30...
DataSheet: DPG60C300HJ datasheetDPG60C300HJ Datasheet/PDF
Quantity: 1000
30 +: $ 3.42321
Stock 1000Can Ship Immediately
$ 3.8
Specifications
Series: HiPerFRED™
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 300V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Base Part Number: DPG60C300
Description

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Diodes, rectifiers and arrays are essential elements of electronic circuits and important parts of modern electronic applications. The DPG60C300HJ is a high-performance, low-level rectifier array used for a variety of applications. This rectifier array is capable of withstanding high frequencies and is particularly suitable for low level analog circuit applications such as AC-DC power conversion, switching power supplies, and motor drives. It is also suitable for general purpose applications due to its high frequency dc switching capabilities.

The DPG60C300HJ is a 3-stage, four-channel high performance rectifier array with built-in integrated junction field effect transistors (FETs) and Schottky diodes. It has a low on-resistance and offers ultra-low noise performance and excellent switching characteristics. Its low gate leakage current helps reduce power consumption and system heat dissipation. The integrated FETs and Schottky diodes also provide low leakage and operating temperature stability, making it particularly suitable for low-level analog circuits.

The DPG60C300HJ is designed with a high efficiency ratio and protected against ESD and short circuit. Its low VF and reverse voltage characteristics, coupled with its integrated thermal design, ensure reliable operation and low power consumption. The device is compliant with RoHS and Green standards, meaning it does not contain hazardous substances such as lead and cadmium. It has an operating voltage of 3.3V, an operating temperature of -40 to +125 ℃, and a storage temperature range from -40 to +150 ℃.

The working principle of the DPG60C300HJ is based on a basic four-layer circuit device. It is constructed using two layers of positively doped semiconductor material, an MOS layer, and a grounding layer. The two layers of positive doped semiconductor material act as p-type and n-type semiconductors. When high voltage, low current is applied to the circuit, the positive (p-type) and negative (n-type) regions of the circuit attract positive and negative charge carriers. The positive charge carriers collect at the positive (p-type) region and the negative charge carriers collect at the negative (n-type) region, creating an electric field. This electric field helps reduce the resistance, resulting in current flow through the circuit.

As an important component in a variety of electronic applications, the DPG60C300HJ is used for high frequency switching and provides ESD and surge protection in the circuit and high levels of electromagnetic interference suppression. Its high frequency switching capabilities and low leakage current make it particularly suitable for low level analog circuits, such as AC-DC power conversion, switching power supplies, motor drives, and general purpose applications.

The specific data is subject to PDF, and the above content is for reference

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