Allicdata Part #: | DPLS350YDITR-ND |
Manufacturer Part#: |
DPLS350Y-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 50V 3A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 3A 100MHz 1W Surf... |
DataSheet: | DPLS350Y-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 390mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1A, 2V |
Power - Max: | 1W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | DPLS350 |
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The DPLS350Y-13 is a single-channel transistor that is capable of providing very high power output with a variety of applications. It is designed for use in radio frequency (RF) and power amplifiers, linear power supplies, telephone amplifiers, audio amplifiers, switching circuits, and various other high-frequency electronic applications.
The DPLS350Y-13 is a bipolar junction transistor (BJT) consisting of three terminals: the emitter, base, and the collector. When a small current is applied at the base terminal, it causes a much larger current to flow between the emitter and collector. This phenomenon is called transistor current amplification, and is the basis of transistor operation as an amplifier of electrical signals.
The DPLS350Y-13 is a NPN type bipolar junction transistor, which means that the majority charge carriers are holes, and electrons are the minority carriers. The electrons are injected from the emitter and are collected by the collector, creating the current flow from the emitter to the collector. The base terminal controls the current amplification of the transistor, acting as a gate for the current to pass through and much like a valve for controlling the current flow between the emitter and the collector.
The rated collector-emitter voltage of the DPLS350Y-13 is 350V, while the maximum collector current is 8A. Its high power rating makes it ideal for high-power applications such as RF and power amplifiers, and its high frequency operation makes it suitable for high frequency applications such as audio amplifiers and telephone amplifiers.
The DPLS350Y-13 has an operating temperature range of -55°C to +150°C, making it suitable for a wide range of applications. It has a thermal resistance of 1.8°C/W, which is relatively low, making it capable of handling large amounts of power. The maximum power dissipation of the transistor is also quite high at 220W, making it capable of handling large currents.
The DPLS350Y-13 is designed for use in high-power, high-frequency applications and is capable of providing very high power output. It is a robust, reliable, and versatile bipolar junction transistor that is ideal for a wide range of applications from RF and power amplifiers to linear power supplies and audio amplifiers. It can also be used in switching circuits and other high-frequency electronic applications.
The specific data is subject to PDF, and the above content is for reference
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