Allicdata Part #: | DRC3143X0LTR-ND |
Manufacturer Part#: |
DRC3143X0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 100MW SSSMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | DRC3143X0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | SSSMini3-F2-B |
Base Part Number: | DRC3143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRC3143X0L Pre-Biased Single Bipolar (BJT) transistor may be one of the most important transistors available today. It is extensively used in many applications, thanks to its excellent performance and reliability. In this article, we will discuss its application field as well as its working principles.
First, let\'s examine the field in which the DRC3143X0L is commonly applied. This transistor has found widespread use in consumer electronics, including television and stereo systems, as well as in computers. It is used in the main amplifiers of drive circuit, driver stages, and so on. It is also used in automotive and industrial control systems, for example to control relays, fans and motors.
Next, we will take a look at the internal workings of the DRC3143X0L. This transistor is a Pre-Biased Single Bipolar (BJT) transistor. This means that it contains two junction field-effect transistors (JFETs) that are connected together in series. Each JFET has a gate-source voltage applied to it, which is known as biasing. This biasing determines the conductance of the transistor.
The working principle behind the DRC3143X0L is that it combines the advantages of both the junction field-effect transistor (JFET) and bipolar junction transistor (BJT) configurations. This allows the transistor to provide very precise current control, with minimum power dissipation. Furthermore, the pre-biasing of the two JFETs means that current is conducted more efficiently and with less distortion.
The DRC3143X0L is also noted for its excellent current-transfer ratio (CTR). This is because the two JFETs allow for an effective current transfer from the collector to the emitter. As a result, the device has a high current gain, allowing it to be used in applications that require large amounts of power.
Finally, let\'s discuss the other characteristics of the DRC3143X0L that make it such an attractive choice. For one, it has an extremely low noise figure. This is because the pre-biased JFETs limit the amount of noise that passes through. Additionally, it also has a high gain-bandwidth product, making it suitable for applications that require wide bandwidths. Furthermore, it is extremely stable, thanks to its temperature-insensitive characteristics.
In conclusion, the DRC3143X0L Pre-Biased Single Bipolar (BJT) transistor is an excellent choice for many applications. It combines the advantages of both JFETs and BJTs to provide excellent performance, reliability and current control. Furthermore, it is noted for its low noise figure, high gain-bandwidth product and excellent temperature-insensitive characteristics. This makes it an ideal device to use in a wide range of applications, particularly in consumer electronic and automotive systems.
The specific data is subject to PDF, and the above content is for reference
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