DS1312E/T&R Allicdata Electronics
Allicdata Part #:

DS1312E/T&R-ND

Manufacturer Part#:

DS1312E/T&R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC CONTROLLER NV BW/RST 20-TSSOP
More Detail: N/A
DataSheet: DS1312E/T&R datasheetDS1312E/T&R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Controller Type: Nonvolatile RAM
Voltage - Supply: 4.75 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP
Base Part Number: DS1312
Description

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Memory - Controllers: DS1312E/T&R Application Field and Working Principle

The DS1312E/T&R is an external controller designed to provide memory optimization for industrial and consumer applications. This memory controller is a device that connects directly to the user\'s system that can provide an additional level of control over the memory addressing, data flow, and memory access commands. The device has a wide range of features and can be used in both consumer and industrial environments.

The DS1312E/T&R is designed to control the data flow, address multiplexing, and access commands from memory. It also provides data corruption protection and statistical FIFO management. It supports up to 8 address buses with 24-bit addressing and handles up to 512mb/s of data traffic. In addition, the device provides a programmable cache controller, programmable error correction code (ECC) functionality, and protection against concurrent programming and write operations.

The device has several different working principles, depending on the application. For example, the DS1312E/T&R operates in a multi-master configuration, where multiple masters can communicate with each other via the controllers. This allows the controller to handle data flow across multiple devices and optimizes the memory usage in the system. The DS1312E/T&R also has several built-in algorithms which optimize the data traffic and provide a more efficient use of the memory resources.

The DS1312E/T&R is designed to provide a greater level of control over the memory addressing and flow of information. With this device, users can control the start address and length, memory page sizes, and data read and write operations. It is also capable of combining multiple data transactions into one transaction in order to reduce the latency. This device also supports several read and write interrupts and allows the user to prioritize certain memory transactions. By utilizing these features, users can significantly improve the speed of their memory access operations.

The DS1312E/T&R also provides a robust error correction code (ECC) to detect and correct errors that might occur during the data transfer. This ECC can be used to ensure the integrity of the data being transferred and, if necessary, to identify bits that need to be corrected in order to ensure that errors are not propagated. The ECC also ensures that the data is recovered in the case of any errors that might occur during the transfer.

The DS1312E/T&R is a versatile device that can be utilized to improve memory access, control the data flow, and provide a higher level of control over the memory addressing. This device is well-suited for applications that require higher memory throughput or require data integrity protection. With its wide range of features, the DS1312E/T&R is an excellent choice for any application that requires higher levels of memory access control and protection.

The specific data is subject to PDF, and the above content is for reference

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