DS1330ABP-70IND

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Memory is an essential component of any computer in our era. It stores data, programs and other information of the computer. In this article, we will discuss the application field and working principle of a specific piece of memory -- DS1330ABP-70IND.

The DS1330ABP-70IND is a 32K Static RAM in DIP package. It is designed for applications requiring low voltage and very low power consumption, such as watches, digital clocks, portable computers, etc. With a reduced assortment of logic levels, DS1330ABP-70IND allows a three-volt operation. The memory is developed to meet the new requirements of portable devices and battery powered applications.

As a Static RAM, the DS1330ABP-70IND operates using a single +3V supply, or +2.9V to +3.6V. It has high speed access; cycle times down to 70ns. It provides 125mA maximum active current and 35uA maximum standby current. In addition to the Read/Write operations, DS1330ABP-70IND also permits Data Protector Mode and Data Retain Mode. These features allow DS1330ABP-70IND to protect the data from external noise.

In terms of working principle, DS1330ABP-70IND uses CMOS technology for the chip’s construction. Since it provides high speed and low power operation, CMOS technology is used in many other Static RAMs. For example, some Static RAMs have 4K bits, 8K bits, 32K bits, with cycle time of 200ns, 150ns and 70ns, respectively.

CMOS is a type of N-channel MOSFET that is used to construct logic gates and other digital circuits. It uses levels of logic to send information. In static RAMs, a row of transistors and capacitors are used as memory cells to store information. When a signal is sent to a particular memory cell, the transistor conducts the signal to the capacitor, thus the information is stored. To read the information, the signal is sent to the memory cell and read off the capacitors.

To conclude, the DS1330ABP-70IND is a Static RAM designed for portable applications requiring low voltage and low power consumption. It operates using a single +3V supply, and provides high speed operation with cycle times down to 70ns. Its working principle is based on CMOS technology, which employs N-channel MOSFETs and logic levels for transmitting information.

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