DS1330BL-100 Allicdata Electronics
Allicdata Part #:

DS1330BL-100-ND

Manufacturer Part#:

DS1330BL-100

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 256K PARALLEL 34LPM
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ...
DataSheet: DS1330BL-100 datasheetDS1330BL-100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-LPM
Supplier Device Package: 34-LPM
Base Part Number: DS1330BL
Description

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Memory is an integral component of any modern computing system. As data requirements continue to increase and storage needs become more varied, fast, robust, and reliable memory technologies become increasingly important.

One such memory technology is the DS1330BL-100, a 2KB non-volatile memory chip. This type of memory is a type of electrically-erasable, programmable, read-only memory (EEPROM) that allows user data to be written, read, and erased without requiring a power source.

Application of DS1330BL-100

One of the main advantages of the DS1330BL-100 is its wide range of applications. This type of memory is used in embedded systems such as microcontrollers, application-specific integrated circuits (ASICs), industrial controllers, and computer systems. In these systems, the DS1330BL-100 can be used for storing configuration and calibration data, bootloader code, or operating system code.

It can also be used for storing passwords, key codes, and other critical data. This type of memory is commonly used in consumer electronics, such as smartphones, wearables, and other Internet of Things (IoT) devices, due to its small size and low power consumption.

Working principle of the DS1330BL-100

At the core of the DS1330BL-100 is the NMOS (N-channel Metal Oxide Semiconductor) process technology. This specific process allows the chip to operate at a low voltage, making it highly suitable for applications such as embedded systems and consumer electronics.

The chip is organized as four 256-byte pages and is written using a one-byte write command. Once the byte has been written, it is locked, making it non-volatile. The chip is also programmed using a two-byte program command.

The DS1330BL-100 memory chip also features a "page mode" that allows multiple bytes to be written to the same page, resulting in a faster write time. The chip also has a built-in self-erase function that automatically erases a page after it has been programmed.

The chip also has a power-fail monitoring circuit that allows it to detect when the power supply has been interrupted. In the event of a power failure, the chip\'s memory will be preserved.

Conclusion

The DS1330BL-100 is a robust, reliable, and low-power non-volatile memory chip that is capable of storing user data without the need of a power source. It is a suitable choice for applications such as embedded systems and consumer electronics due to its small size and low power consumption.

The chip is organized as four 256-byte pages and can be written using a one-byte write command, or programmed using a two-byte program command. The built-in power-fail monitoring circuit ensures that the chip\'s memory is protected in the event of a power interruption. The chip is also features a page mode that allows for faster write times.

The specific data is subject to PDF, and the above content is for reference

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