DS1350WP-100IND+ Allicdata Electronics
Allicdata Part #:

DS1350WP-100IND+-ND

Manufacturer Part#:

DS1350WP-100IND+

Price: $ 81.90
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 4M PARALLEL 34PWRCAP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: DS1350WP-100IND+ datasheetDS1350WP-100IND+ Datasheet/PDF
Quantity: 80
1 +: $ 74.45340
10 +: $ 70.73290
25 +: $ 65.29320
50 +: $ 62.03030
100 +: $ 56.13340
Stock 80Can Ship Immediately
$ 81.9
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap™ Module
Supplier Device Package: 34-PowerCap Module
Base Part Number: DS1350W
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DS1350WP-100IND+ memory is a cost-effective, highly reliable non-volatile memory solution designed for a variety of applications. The memory was designed with a low power consumption and high-speed serial interface for low system power dissipation. The DS1350WP-100IND+ has a wide variety of features and capabilities, making it well suited for many different applications. This article will discuss the application field and working principle of the DS1350WP-100IND+.

Application Field

The DS1350WP-100IND+ is an ideal solution for a wide range of projects and application scenarios. The memory offers the perfect solution for low- to medium-volume projects and offers a low power consumption and high speed operation. The memory is suitable for use in embedded systems, lighting systems, industrial control systems, photoelectric sensors and field-programmable gate array (FPGA) designs. It also offers integrated protection against external sources of interference and provides robust, reliable operation in fluctuating temperatures. The memory is also suitable for use in a variety of hand-held devices, such as cell phones, PDAs and smart watches.

Working Principle

The DS1350WP-100IND+ utilizes an asynchronous serial interface protocol for data transfer. It employs an address register and status register to enable address and status bits to be accessed via the serial interface. The memory\'s serial interface protocol provides two data speeds. The low speed option is 5 Mbps and the fast mode is 10 Mbps. Data is read or written to the memory in dedicated pages that range in size from 128 bytes to 4096 bytes.

The memory is organized into blocks of data that are written with the starting address and length of the data. The data can be written and read in a single transaction, or multiple transactions can be used. The memory uses a password protection feature to restrict access to certain blocks of the device. The password is stored in a dedicated, hidden page within the memory.

The DS1350WP-100IND+ uses an advanced, non-volatile memory technology. The memory does not require a battery or any other type of backup power source and provides extremely high data retention. The memory is capable of retaining data for up to 10 years without interruption.

The memory is designed to perform a number of special industry-specific tasks. It supports special instructions for programmable logic controllers (PLCs), industrial robots and machine controllers. The memory also supports global variable memory, which allows the memory to be used in a variety of locations without losing data. The memory also features an industry-standard I/O port, allowing the data to be easily accessed by a variety of devices.

The DS1350WP-100IND+ is a reliable, cost-effective solution for a variety of applications. The memory is ideal for use in embedded systems, lighting systems, industrial control systems and more. In addition, the memory offers integrated protection against external sources of interference and provides robust, reliable operation in fluctuating temperatures. Finally, the memory features an advanced, non-volatile memory technology, allowing it to retain data for up to 10 years without interruption.

The specific data is subject to PDF, and the above content is for reference

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