Allicdata Part #: | DS1350YP-70IND+-ND |
Manufacturer Part#: |
DS1350YP-70IND+ |
Price: | $ 74.11 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 4M PARALLEL 34PWRCAP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8... |
DataSheet: | DS1350YP-70IND+ Datasheet/PDF |
Quantity: | 1000 |
40 +: | $ 67.37410 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 34-PowerCap™ Module |
Supplier Device Package: | 34-PowerCap Module |
Base Part Number: | DS1350Y |
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The DS1350YP-70IND+ is a type of memory that stores information and is composed of many interconnecting cells. Each cell is capable of representing one bit, either a 0 or 1, which is the basic unit of information in computing. The purpose of the DS1350YP-70IND+ is to provide temporary storage for programs and data, and it is used to provide fast data access and processing. It is one of the most important components of a computer.
The DS1350YP-70IND+ is a type of dynamic random access memory (DRAM), which uses a refresh cycle to keep the bits in each cell refreshed. The refresh cycle is accomplished by sending electrical signals to all of the cells, causing them to reset and refresh their stored data. This refresh cycle is important as it ensures that the data in the DRAM is not lost if the power is removed. The refresh cycle also allows the DRAM to retain its data even when the power is off, making it an ideal choice for servers and other applications.
The DS1350YP-70IND+ is a high-speed, high-density memory device with a capacity of 16Mb of data storage. It is designed for use in embedded systems and networking applications where speed and reliability are key. It is also capable of handling interrupt driven applications, which makes it a great choice for embedded applications.
The DS1350YP-70IND+ also offers a number of features that make it attractive to system designers. It is capable of operating at a high clock speeds and is also able to sustain continuous write operations, making it an ideal choice for data-intensive applications. It is also capable of supporting error-correcting memory (ECC), which ensures the data that is stored in the memory is accurate and reliable. In addition, it has error-detection features, which allow the device to detect and correct any errors that occur in the data.
The working principle of the DS1350YP-70IND+ is very simple: when electricity is applied to the memory cells, the bits in each cell are either set to a 1 or set to a 0. The read/write operation is handled by the memory controller, which controls the flow of electricity to and from the cells. When an address on the memory is accessed, the memory controller sends an electrical charge to the cell with that address. This charge causes the bit in the cell to change and is then read by the controller. The controller then sends a signal back to the device that is using the memory, and the device can now read the value of the cell.
In summary, the DS1350YP-70IND+ provides a fast and reliable memory device for embedded systems and networking applications. It is capable of operating at high speeds and can sustain continuous write operations, making it an ideal choice for data-intensive applications. It also offers error-correction and error-detection features, which ensure accurate and reliable data storage. With its wide range of features, the DS1350YP-70IND+ makes an excellent choice for embedded systems, networking, and other applications where speed and reliability are paramount.
The specific data is subject to PDF, and the above content is for reference
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