Allicdata Part #: | DS2030W-100#-ND |
Manufacturer Part#: |
DS2030W-100# |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 256K PARALLEL 256BGA |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x ... |
DataSheet: | DS2030W-100# Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 256-BGA |
Supplier Device Package: | 256-BGA (27x27) |
Base Part Number: | DS2030 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Overview
The DS2030W-100# is a high performance, nonvolatile random access memory device. It is an ideal choice for providing a battery-backed high-capacity, low-power solution to embedded applications. The DS2030W-100# memory provides a wide range of application fields and working principles, including its small size, low power consumption, and high-speed transfer rates.
Application Fields
The DS2030W-100# is suitable for use in systems requiring long-term data storage, with its low power consumption, large capacity, fast write and read speeds, and secure storage. It is also suitable for applications requiring long-term storage of data in low power, compact form.
Examples of applications include consumer, automotive, industrial, medical, and military products, as well as robotics and embedded systems. Applications include data logging, real-time data collection, real-time data manipulation, digital printing and imaging, and sensor readings.
The DS2030W-100# can also be used in embedded applications that require a wide range of operating conditions. It is suitable for automotive, aircraft, industrial, and telecom applications, as well as for smart sensors and wireless devices.
Working Principle
The DS2030W-100# memory is based on a nonvolatile DRAM design and uses a three-transistor cell array, allowing fast write and read operations. The nonvolatile DRAM ensures that data is stored securely even when the power is turned off, and the device writes and reads data at up to 100MHz.
The device also includes an on-chip ECC capable of detecting and correcting single-bit errors, reducing the chances of errors due to soft errors and ensuring data integrity. It also features a low-power auto-refresh operation that is performed only when necessary, ensuring minimized power consumption.
Conclusion
The DS2030W-100# is a high performance, nonvolatile random access memory device, suitable for use in a wide range of applications. It is an ideal choice for providing a battery-backed high-capacity, low-power solution to embedded applications, with its small size, low power consumption, fast write and read speeds, and secure storage.
The specific data is subject to PDF, and the above content is for reference
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