DS2045Y-100# Allicdata Electronics
Allicdata Part #:

DS2045Y-100#-ND

Manufacturer Part#:

DS2045Y-100#

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 1M PARALLEL 256BGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8...
DataSheet: DS2045Y-100# datasheetDS2045Y-100# Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-BGA
Supplier Device Package: 256-BGA (27x27)
Base Part Number: DS2045
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DS2045Y-100# memory component is a versatile component that can be used for a variety of applications. It is a non-volatile, high-speed, high-density component with a working frequency of up to 400 MHz. It can be used for the storage of data and instructions in embedded applications, personal computers, and other electronics.

DS2045Y-100# utilizes a single-transistor dynamic SRAM architecture with built-in sense amplifiers. It is capable of containing up to 256K or 1M words of data, depending on the memory chip type. The memory uses a page mode to access data, and the data is internally written with a two-phase power source.

When using this memory component, the user should be aware of the various features available. It has the capability of being configured as either a static RAM or dynamic RAM, depending on the application. It also offers the option of being programmed with up to nine data widths. Different types of read and write cycles can also be configured to accommodate different applications.

When configured as a static RAM, the component supports random write and read cycles. This means that it can be used for a wide range of applications that require the need for random data access. When configured as a dynamic RAM, the component supports refresh cycles, providing it with a greater capacity for storing data.

The component also provides enhanced 16-bit address access for improved system performance, particularly when using programs that require complex address manipulation. Additionally, the component includes a two-phase power source, as well as an internal clock that allows it to operate at up to 400 MHz.

For applications that require high-speed data access and storage, the DS2045Y-100# memory component is the ideal choice. With its single-transistor dynamic SRAM architecture, improved data widths and refresh cycles, the component is capable of efficiently handling complex data storage needs. Additionally, the component\'s two-phase power source, internal clock and configurable memory settings allow it to be customized for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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