DS2065W-100# Allicdata Electronics
Allicdata Part #:

DS2065W-100#-ND

Manufacturer Part#:

DS2065W-100#

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 8M PARALLEL 256BGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (1M x 8) ...
DataSheet: DS2065W-100# datasheetDS2065W-100# Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-BGA
Supplier Device Package: 256-BGA (27x27)
Base Part Number: DS2065
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important component for most electronic devices. The DS2065W-100# is a piece of memory that has various features and applications in the field of electronics. In this article, we will discuss the applications and working principle of the DS2065W-100# memory.

The DS2065W-100# memory is a high-performance, high-density 128Mbits Dynamic Random Access Memory (DRAM). It is designed to meet the demands of the current electronics industry. With its low-power requirements and high speed read/write characteristics, it is ideal for portable devices, digital cameras and other devices that require high storage and low power requirements. The DS2065W-100# can handle almost any digital data, including audio, video and images.

The DS2065W-100# memory is highly reliable and efficient, making it ideal for memory intensive applications. Its low power requirements mean it can be used for a wide variety of applications, such as automotive, industrial and telecom applications. It is also well-suited for applications that require high speed transfer rates and low latency, such as multimedia and networks.

The working principle of the DS2065W-100# memory is based on a DRAM structure. DRAM stands for Dynamic Random Access Memory, and is a type of memory that stores data in a series of rows and columns. Each row or column is made up of a number of bits that are individually addressed. Data is written to the memory by sending a signal to the relevant bit, and data is retrieved by reading the signal from the bit.

The DS2065W-100# memory has two different speeds. It can operate at up to 66MHz or 128MHz, depending on the system requirements. It also offers burst read/write capabilities and has an integrated EDC (error-correction code) that can help prevent data corruption.

The DS2065W-100# memory is a versatile and reliable solution for memory intensive applications. It is compatible with a wide range of ICs and embedded processors and can be used for embedded systems, automotive, industrial and telecom applications. With its low-power requirements, high-speed access and reliability, the DS2065W-100# memory is a great solution for memory intensive applications.

The specific data is subject to PDF, and the above content is for reference

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