Allicdata Part #: | DS2065W-100#-ND |
Manufacturer Part#: |
DS2065W-100# |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Maxim Integrated |
Short Description: | IC NVSRAM 8M PARALLEL 256BGA |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (1M x 8) ... |
DataSheet: | DS2065W-100# Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 8Mb (1M x 8) |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 256-BGA |
Supplier Device Package: | 256-BGA (27x27) |
Base Part Number: | DS2065 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an important component for most electronic devices. The DS2065W-100# is a piece of memory that has various features and applications in the field of electronics. In this article, we will discuss the applications and working principle of the DS2065W-100# memory.
The DS2065W-100# memory is a high-performance, high-density 128Mbits Dynamic Random Access Memory (DRAM). It is designed to meet the demands of the current electronics industry. With its low-power requirements and high speed read/write characteristics, it is ideal for portable devices, digital cameras and other devices that require high storage and low power requirements. The DS2065W-100# can handle almost any digital data, including audio, video and images.
The DS2065W-100# memory is highly reliable and efficient, making it ideal for memory intensive applications. Its low power requirements mean it can be used for a wide variety of applications, such as automotive, industrial and telecom applications. It is also well-suited for applications that require high speed transfer rates and low latency, such as multimedia and networks.
The working principle of the DS2065W-100# memory is based on a DRAM structure. DRAM stands for Dynamic Random Access Memory, and is a type of memory that stores data in a series of rows and columns. Each row or column is made up of a number of bits that are individually addressed. Data is written to the memory by sending a signal to the relevant bit, and data is retrieved by reading the signal from the bit.
The DS2065W-100# memory has two different speeds. It can operate at up to 66MHz or 128MHz, depending on the system requirements. It also offers burst read/write capabilities and has an integrated EDC (error-correction code) that can help prevent data corruption.
The DS2065W-100# memory is a versatile and reliable solution for memory intensive applications. It is compatible with a wide range of ICs and embedded processors and can be used for embedded systems, automotive, industrial and telecom applications. With its low-power requirements, high-speed access and reliability, the DS2065W-100# memory is a great solution for memory intensive applications.
The specific data is subject to PDF, and the above content is for reference
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