DS24B33Q+T&R Allicdata Electronics
Allicdata Part #:

DS24B33Q+TR-ND

Manufacturer Part#:

DS24B33Q+T&R

Price: $ 1.11
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC EEPROM 4K 1WIRE 6TDFN
More Detail: EEPROM Memory IC 4Kb (256 x 16) 1-Wire® 2µs 6-TDF...
DataSheet: DS24B33Q+T&R datasheetDS24B33Q+T&R Datasheet/PDF
Quantity: 12500
2500 +: $ 1.01250
Stock 12500Can Ship Immediately
$ 1.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 16)
Write Cycle Time - Word, Page: --
Access Time: 2µs
Memory Interface: 1-Wire®
Voltage - Supply: 2.8 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-TDFN-EP (3x3)
Base Part Number: DS24B33
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DS24B33Q+T&R is a memory device that offers tremendous improvements for a variety of applications. It combines the advantages of DRAM and SRAM, allowing it to achieve faster speeds, increased density, and lower power consumption than alternative solutions. Additionally, the device offers robust data protection and its dedicated read/write terminals allow for easy integration into many different systems.

The DS24B33Q+T&R device is a Quad-SPI Static Random Access Memory (SRAM) device. It consists of four data I/Os and four control pins. These I/Os include a write-enable pin, four address pins, four data outputs, and four data inputs. The device also features read-only mode, inhibit function, burst read, write, compare operations, power-down capability, timed write operations, and a full operating temperature range.

The device utilizes a Quad-SPI memory architecture along with an advanced on-chip write tracking and refresh circuit to provide advanced data protection. This write tracking and refresh circuit provides a safe and secure way to access and store data in the memory. In addition, it eliminates the need for more expensive external refresh circuits that are found in traditional SRAMs. This helps to reduce component costs and improve power efficiency.

The DS24B33Q+T&R is suitable for use in a wide range of applications. These include automotive, industrial, embedded, consumer, and commercial applications. Its low power consumption and wide operating temperature range allow for reliable performance in those applications. Additionally, its robust data protection and read-write terminals make it an ideal solution for applications that require heavy access to data.

The DS24B33Q+T&R memory device is a fast and reliable device that is suitable for any application that requires data storage and access. Its stability and low power consumption makes it an ideal choice for applications that require heavy access to data and require a safe and secure way to store the data. In addition, the device\'s extended operating temperature range, robust data protection, and write tracking and refresh circuit make it an ideal solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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