DS64MB201SQE/NOPB Allicdata Electronics
Allicdata Part #:

DS64MB201SQE/NOPBTR-ND

Manufacturer Part#:

DS64MB201SQE/NOPB

Price: $ 8.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC MUX/BUFFER DUAL 54WQFN
More Detail: Networking, Telecommunications Switch IC 3 Channel...
DataSheet: DS64MB201SQE/NOPB datasheetDS64MB201SQE/NOPB Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 2 (1 Year)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
250 +: $ 7.85694
Stock 1000Can Ship Immediately
$ 8.65
Specifications
On-State Resistance (Max): --
Base Part Number: DS64MB201
Supplier Device Package: 54-WQFN (10x5.5)
Package / Case: 54-WFQFN Exposed Pad
Operating Temperature: -40°C ~ 85°C (TA)
Features: Equalization, RXAUI, SATA, XAUI
-3db Bandwidth: --
Voltage - Supply, Dual (V±): --
Voltage - Supply, Single (V+): 2.38 V ~ 2.63 V
Series: --
Number of Channels: 3
Switch Circuit: --
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Applications: Networking, Telecommunications
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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Introduction

The DS64MB201SQE/NOPB device is an analog switch that is designed for a wide range of specialized applications. It belongs to the family of analog switches and is used for special purpose applications such as precision switching and level shifting. This guide discusses the application field and the working principle of the device.

Application Fields

The DS64MB201SQE/NOPB is suitable for a wide range of applications, such as measurements, switching signals, and power lines. These include applications such as power supplies, current source programs, and communication interface control. It combines a high linear control of the switching operation with a good isolation and low leakage current in order to provide a reliable and cost-effective solution for these applications. The device is also used in automotive electro-mechanical systems, power tools and medical devices. It is an ideal solution for switching and isolating analog signals between sub-systems and for level shifting in low-voltage applications. The device is also suitable for inter-system isolation and can provide an isolation of 45V from the system ground.

Features

The DS64MB201SQE/NOPB has a number of features that make it ideal for these applications. It includes an integrated ESD diode that features a wide temperature range, low leakage, and low capacitance. It also features an integrated active pull-up for dynamic on-off switching and a low input impedance for maximum signal integrity. The device is designed to switch both digital and analog signals and is capable of switching up to 100V. It also has a fast switching speed of 200 nsec and can handle up to 500 mA of current.

Working Principle

The DS64MB201SQE/NOPB is a digital switch controller with analog signal switching capability. Its working principle is based on a MOSFET technology, which uses an insulated gate bipolar transistor (IGBT) as the main power transistor. The IGBT is switched ON and OFF by the switching logic of the device. This enables the device to achieve fast ON and OFF times. The ON and OFF times of the device are regulated by a charge pump circuit. This circuit provides a supply voltage to the gate of the IGBT that is necessary for efficient switching operation. The charge pump ensures that the supply voltage is constant regardless of voltage drop across the switch. The device is also designed with a debouncing feature that ensures a reliable operation and reduces the number of false triggering events.

Conclusion

The DS64MB201SQE/NOPB digital switch controller with analog signal switching capability is an ideal solution for a wide range of applications such as power supplies, current source programs, and communications inter-faces. It has a wide temperature range, low leakage, low capacitance and a fast switching speed. It includes an integrated ESD diode and active pull-up for dynamic on-off switching, as well as a low input impedance for maximum signal integrity. Its working principle is based on a MOSFET technology, which uses an insulated gate bipolar transistor (IGBT) as the main power transistor and is regulated by a charge pump circuit.

The specific data is subject to PDF, and the above content is for reference

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