DSA340200L

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	12V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 200mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	270 @ 10mA, 2V
Power - Max:	100mW
Frequency - Transition:	300MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	SSSMini3-F2-B
Base Part Number:	DSA3402

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DSA340200L Application Field and Working PrincipleThe DSA340200L is a single bipolar transistor from Analog Devices aimed at applications such as RF, microwave and millimeter-wave amplification and switching. It is specifically designed for use in high linearity and high-power applications requiring either output power of up to 200 W or supply voltage of up to 200 V. This article provides an overview of the DSA340200L application field and explains its working principle.Application FieldThe DSA340200L is designed to operate over a wide range of frequencies, including 0.05 to 5 GHz. Common applications of the device include:• High-power amplifier (HPA) and driver stages;• High-frequency switching and video switching;• Frequency up- or down-conversion, such as frequency synthesis, frequency shifting;• Local oscillators, modulators and detectors, for wireless and satellite communications systems.The DSA340200L is also suitable for use in base station amplifiers, operating at frequencies up to 2.5 GHz, where it can provide gain as high as 47 dB. In addition, the device provides superior performance in RF/microwave measurements and remote control systems.Working PrincipleThe DSA340200L is a single NPN bipolar transistor that has both active and reverse mode features. In active mode, the device’s base-emitter junction is forward-biased and current flows in the emitter-collector path. The resulting increase in collector current causes an increase in collector voltage, providing gain. In reverse mode, the device’s base-emitter junction is reverse-biased and current flows in the collector-emitter path. This causes a decrease in collector voltage, providing attenuation.The device is also designed to provide low distortion and high linearity by reducing intermodulation and harmonic distortion. The device operates well under pulse conditions, which are often present in high power applications. It also includes a protection circuit that guards against device damage due to over-current or over-voltage conditions.ConclusionThe DSA340200L is a robust, single NPN bipolar transistor from Analog Devices with superior linearity and gain characteristics. It is well-suited for high-power applications such as HPA and driver stages, frequency up- or down-conversion, local oscillators, modulators and detectors. It includes protection circuits to guard against device damage due to over-current or over-voltage conditions, and is designed to provide high linearity with low distortion, even under pulse conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description