DSA5001R0L Allicdata Electronics
Allicdata Part #:

DSA5001R0LTR-ND

Manufacturer Part#:

DSA5001R0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PNP 50V 0.1A SMINI3
More Detail: Bipolar (BJT) Transistor PNP 50V 100mA 150MHz 150m...
DataSheet: DSA5001R0L datasheetDSA5001R0L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
Power - Max: 150mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2-B
Base Part Number: DSA5001
Description

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Bipolar Junction Transistors (BJT) are a type of transistor that utilizes both electrons and holes to create a current circuit. A BJT typically consists of three terminals - a base, a collector and an emitter. The base and the emitter are connected to the voltage source while the collector is connected to the load. In the current circuit, the base controls the amount of current flowing into and out of the collector, depending on its own state. With this type of transistor, it is possible to amplify current flow, which can be used in various applications.

The DSA5001R0L is a single-transistor BJT device, designed for both low- and high-power applications. The collector-base junction has been optimized with an oxide passivation layer and an internal oxide field plate on the emitter to ensure a low ON-resistance and high switching characteristics. The device includes robust-gate avalanche-proof technology to ensure improved safety. The package is compact and can be used for DC and AC signals, with a maximum voltage rating of 5 V and a maximum current rating of 5A.

The working principle of the DSA5001R0L relies on the use of an electrically-controlled resistor, known as a field-effect transistor (FET). This device is made up of multiple transistors connected in a specific configuration, with the primary purpose of controlling device current by varying the size of the gate electrical field. A resulting benefit is that the device requires very low power input and produces substantial output current in response. Additionally, it has a high input impedance, making it well-suited for signal amplification in audio signal processing.

In the DSA5001R0L, the FET is connected in series with a transistor, with its gate connected to the drain. This configuration offers a degree of flexibility with regard to the exact switching characteristics of the device. Additionally, the device can be configured to operate in both linear and saturation modes, allowing it to be used in a variety of audio applications.

The DSA5001R0L can be used in a variety of electronics applications, such as digital audio, instrumentation amplifiers, audio signal processors and audio power amplifiers. As a single BJT, it has the added advantage of increased power dissipation due to its high ON-resistance, allowing for higher levels of output power than other BJT types. The DSA5001R0L is a versatile device and is well-suited for audio applications requiring amplification and power switching.

The specific data is subject to PDF, and the above content is for reference

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