DSEP2X31-12A Allicdata Electronics
Allicdata Part #:

DSEP2X31-12A-ND

Manufacturer Part#:

DSEP2X31-12A

Price: $ 13.71
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: DIODE MODULE 1.2KV 30A SOT227B
More Detail: Diode Array 2 Independent Standard 1200V 30A Chass...
DataSheet: DSEP2X31-12A datasheetDSEP2X31-12A Datasheet/PDF
Quantity: 1000
10 +: $ 12.33540
Stock 1000Can Ship Immediately
$ 13.71
Specifications
Series: HiPerFRED™
Packaging: Tube 
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.72V @ 30A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Base Part Number: DSEP2X
Description

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The DSEP2X31-12A rectifier diode is a semiconductor device that can permit current to flow in one direction while blocking the current in the opposite direction. It is composed of a pair of p-type and n-type semiconductor layers which are connected together at the junction area of both the layers. The device is available in a hermetic package with a wide variety of mounting options. The DSEP2X31-12A rectifier diode is a single diode with dual outputs.

The DSEP2X31-12A is typically used in a variety of applications such as: rectification, DC-to-DC conversion, power switching, motor commutation, and signal rectification.

The primary advantage of the DSEP2X31-12A rectifier diode is its very low forward voltage drop-out. This is due to the fact that the semiconductor layers are of opposite carrier types, allowing the majority carriers to mate and interact when the device is forward-biased.

When an external electric field is applied across the junction, the majority carriers in the p-type material are repelled and the majority carriers in the n-type material move closer to the junction area. This allows free electrons in the n-type layer to cross the junction area and directly enter to the positive voltage terminal while holes in the p-type layer move towards the negative voltage terminal.

However, when the device is reverse biased, the electric field reduces the current as the majority carriers from both the layers tend to repel each other and the junction blocks the current from flow. The internal electric field thus produced is able to resist large voltages and currents, making this device an ideal choice for applications with high voltage inputs.

The DSEP2X31-12A rectifier diode is a planar type device available in 10.1-A and 5.5-A ratings. The device has a zero point voltage of 1 V, a voltage drop of 0.5 V, and a reverse current leakage of 0.01 μA. The package has a wide operating temperature range of -65°C to 150°C.

In applications where DC voltage is needed, the DSEP2X31-12A can be used in combination with a series of rectifier diodes in a bridge rectifier configuration. The device is also suitable for use in applications where power needs to be controlled with the presence of a DC voltage. For example, the device can be used to commutate DC motors or regulate the voltage in a power supply.

The DSEP2X31-12A rectifier diode is found in a wide variety of applications, including automotive, medical, industrial, and consumer applications. The device offers a cost-effective solution for providing protection from high voltages, and it is highly reliable, making it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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