DSEP9-06CR Allicdata Electronics
Allicdata Part #:

DSEP9-06CR-ND

Manufacturer Part#:

DSEP9-06CR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: DIODE GP 600V 9A ISOPLUS247
More Detail: Diode Standard 600V 9A Through Hole ISOPLUS247™
DataSheet: DSEP9-06CR datasheetDSEP9-06CR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HiPerDynFRED™
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 4V @ 9A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: ISOPLUS247™
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Description

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DSEP9-06CR is an electronic component classified under Diodes - Rectifiers - Single. It is a surface mount Schottky Barrier Rectifier, consisting of a pair of semiconductor devices that are connected in reverse parallel to each other and designed to protect against transients and allow for low forward voltage drop.

The main application field of the DSEP9-06CR is power management. This rectifier is suitable for use in output rectification circuits of switching power supplies and various power converters, providing protection against transients or positive switching surges. The semiconductor\'s low forward voltage drop also helps reduce power losses in a power supply design. In addition, the small package of the DSEP9-06CR allows it to be easily mounted on a PCB.

Furthermore, the DSEP9-06CR provides high surge capability, excellent reverse leakage current, and good thermal resistance, making it suitable for applications such as motor drives, telecommunications, and motor home stabilizers.

The working principle of the DSEP9-06CR is based on the semiconductor effect from a Schottky Barrier. Schottky Barrier Rectifier is a two-terminal electronic component consisting of two semiconductor layers of different materials, typically a metal and a semiconductor. When a voltage is applied to the metal layer, it will create a voltage drop and a hole current in the semiconductor layer, allowing power to be redirected in the opposite direction.

The DSEP9-06CR semiconductors have an optimized high power Schottky Barrier rectifier structure. This is designed to provide excellent surge capability while also providing low forward voltage drop. In addition, the low if to vf ratio minimizes power losses due to forward voltage drop, while providing excellent thermal resistance and enhanced reliability.

In summary, the DSEP9-06CR semiconductor is a high power Schottky Barrier Rectifier designed for power management, providing high surge capability, excellent reverse leakage current, and good thermal resistance, which makes it suitable for pulling power from all kinds of switching power supplies and power converters. In addition, its small package allows for easy mounting, while its optimized structure provides low forward voltage drop, low switching losses, and enhanced reliability.

The specific data is subject to PDF, and the above content is for reference

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