Transistors - Bipolar (BJT) - Single

Transistors are utilized extensively in all kinds of applications, ranging from simple switching circuits to complex digital systems. One popular type of transistor is the bipolar junction transistor (BJT) which consist of three layers of semiconductor material and can be configured in either n-p-n or p-n-p. The bipolar junction transistor is different from other transistors in that current flow is dependent on two different junctions. Among these transistors, the DSM80100M-7 is one of the most comprehensive products and has found use in a wide range of applications.

DSM80100M-7 Overview

The DSM80100M-7 is a single transistor, BJT small signal very high-speed low power surface mount device that is available in both SOD-323 and SOT-23 packages. This transistor uses a PNP polarity and is designed to work with a maximum operating temperature of 175℃. Its forward base-emitter voltage (VCE) is specified at 1.5V and the collector current (IC) has a maximum value of 100mA. Other key specifications of the DSM80100M-7 areits collector-base capacitance (Ccb) at 0.3V, storage temperature (Tstg) from -25 to 150℃, and collector-emitter breakdown voltage (BVCEO) of 65V.

DSM80100M-7 Application Field and Working Principle

The DSM80100M-7 transistor is primarily intended for use in switching applications, such as high frequency amplifiers and switching devices. This device is also well-suited for audio amplifiers, linear amplifiers, and low voltage power supplies. It has also seen use in pulse applications such as cellular phones, digital transmission lines, as well as portable and automotive electronics. Its primary working principle is transistor action, or the PNP BJT configuration.

The transistor switches using the gate bias voltage, or VBE. When the VBE is applied to the gate, the electrons in the base area of the transistor are attracted to the gate and the transistor becomes closed or “on”. With the onset of current flow, the collector-emitter voltage drops and the transistor biases in its “on” state. Conversely, when the gate bias voltage is removed, the electron\'s attraction to the gate decreases, and the transistor biases “off”. This allows for the transistor to switch in response to the gate voltage.

Conclusion

The DSM80100M-7 is a versatile transistor that finds use in a wide range of applications. Furthermore, it operates with a maximum operating temperature of 175℃, making it well-suited for high-temperature applications. Its primary application field and working principle is switching, where it is used for applications such as high frequency amplifiers and switching devices. With its wide capabilities, the DSM80100M-7 is an ideal product for both hobbyists and industry professionals.