DSS60601MZ4-13

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The DSS60601MZ4-13 is an advanced transistor that is classified under the category of Transistors Bipolar (BJT) – Single. The transistor is designed and fabricated with advanced techniques to achieve high performance and reliability. The DSS60601MZ4-13 can be used in a wide variety of applications and it is suitable for applications such as high power amplifiers, high frequency oscillators, and pulse amplifiers.

Applications

The DSS60601MZ4-13 is a versatile device that can be used in a wide range of applications. It is suitable for a number of general purpose and industrial applications. Some of its general applications include audio amplifiers, high power amplifiers, high frequency oscillators, and pulse amplifiers. It is also suitable for applications such as line drivers, current mirrors, and preamplifier stages.

Features

The DSS60601MZ4-13 has several features that make it suitable for a number of applications. It has a high gain with a maximum collector-base breakdown voltage rating of 80V and a maximum collector-emitter voltage rating of 100V. With a pulse current of 7A and saturated voltage of 0.4V, the device is ideal for use in high power amplifiers and high frequency oscillators.

Working Principle

The DSS60601MZ4-13 employs the basic principle that is used in the operation of all transistors. The transistor is made up of three terminals, namely the base, collector, and emitter. When a small current passes through the base terminal, it controls a larger current between the collector and emitter. The transistor acts as a switch and when the base current is increased, the current between the collector and emitter is also increased. This current can then be used to drive an external circuit such as an amplifier stage.

Package

The DSS60601MZ4-13 has a surface mount package. The package is a dual-in-line type with 4 pins. The terminal areas are connected to the substrate using a wire-bonding technology.

Conclusion

The DSS60601MZ4-13 transistor is an advanced device that is suitable for a range of applications. It is classified under the category of Transistors Bipolar (BJT) – Single and has several features such as a high collector-base breakdown voltage and a high saturated voltage. The device operates on the basic principle of a transistor and is suitable for applications such as high power amplifiers, high frequency oscillators, and pulse amplifiers.

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