| Allicdata Part #: | DSS8110Y-7DITR-ND |
| Manufacturer Part#: |
DSS8110Y-7 |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS NPN 100V 1A SOT363 |
| More Detail: | Bipolar (BJT) Transistor NPN 100V 1A 100MHz 625mW ... |
| DataSheet: | DSS8110Y-7 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.04000 |
| 10 +: | $ 0.03880 |
| 100 +: | $ 0.03800 |
| 1000 +: | $ 0.03720 |
| 10000 +: | $ 0.03600 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 200mV @ 100mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 10V |
| Power - Max: | 625mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package: | SOT-363 |
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DSS8110Y-7 is a silicon NPN transistor designed for a wide range of applications, including switching, oscillation, and amplification. It is a general purpose, small-signal transistor with low noise and good power dissipation. This transistor is made of two sections; the base, collector, and emitter, which are the three pins of the transistor, and the substrate, which is the area beneath the transistor\'s electrically active sections. This transistor is particularly suited for use in low-power applications, and requires only a small amount of power to operate.The base consists of a metal-oxide-semiconductor field-effect transistor, commonly referred to as an MOSFET. This MOSFET is used to control the voltage and current flowing between the collector and emitter of the transistor and is designed to be highly sensitive to small changes in voltage. The drain of the MOSFET is connected to the collector and the source to the emitter. When a voltage is applied to the base, the MOSFET turns on and the current can flow between the collector and emitter.The collector consists of several layers of doped semiconductor material, with each layer having a different amount of doping. This doping affects the conductivity of the collector and emitter and is the main factor in determining the gain of the transistor. The emitter is similarly constructed with different doped layers and the same conductivity governs the emitter current and the gain.The substrate of the transistor is commonly made of silicon, but other materials such as gallium arsenide, indium phosphide, and gallium nitride can be used depending on the application. This substrate serves to isolate the transistor from other components and also helps to dissipate heat.The actual working of DSS8110Y-7 begins when the base is activated by a voltage source. This voltage causes the MOSFET to turn on and the current is then able to flow between the collector and the emitter. Depending on the voltage and current levels in the base, the current flowing between the collector and the emitter can be regulated accordingly. This regulated current is what gives the DSS8110Y-7 its ability to be used for various applications.For example, if the transistor is used for switching, the current between the collector and emitter can be regulated to close and open at determined intervals in order to switch on and off an electrical circuit. If the transistor is used in an amplifier, the current between the collector and emitter will be increased, allowing for more signal to be amplified. The same principle is applied when the transistor is used in oscillators, with the current being increased and decreased at an interval to generate an alternating signal.The DSS8110Y-7 provides a wide range of applications to both commercial and industrial users. It allows for efficient and reliable operation in various types of circuits, and its low noise characteristics make it suitable for use in signal amplifiers. Additionally, its small size and power requirements make it ideal for low-power applications.In conclusion, the DSS8110Y-7 is a versatile transistor that is suitable for a wide range of applications. Its small size and power requirements make it an ideal choice for low-power applications and its low noise characteristics make it a good choice for signal amplifiers. Additionally, its ability to be used for switching, oscillation, and amplification makes it a great choice for a variety of different circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| DSS8110Y-7 | Diodes Incor... | 0.06 $ | 3000 | TRANS NPN 100V 1A SOT363B... |
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DSS8110Y-7 Datasheet/PDF