DTV32B-E3/45 Allicdata Electronics
Allicdata Part #:

DTV32B-E3/45-ND

Manufacturer Part#:

DTV32B-E3/45

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1.5KV 10A TO263AB
More Detail: Diode Standard 1500V 10A Surface Mount TO-263AB
DataSheet: DTV32B-E3/45 datasheetDTV32B-E3/45 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 175ns
Current - Reverse Leakage @ Vr: 100µA @ 1500V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: DTV32
Description

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Introduction

DTV32B-E3/45 is a single diode rectifier, it has a high surge forward current ability and is capable of withstanding high repetitive peak reverse and forward voltages. It’s usedin a wide range of applications, and its two most popular types are surface mounted and through-hole.

Application Fields

DTV32B-E3/45 is mainly used in engineering applications such as AC/DC power supplies, uninterruptible power supplies, DC/DC converters, AC-DC forward converters, high-frequency switching power supplies, variable power supplies, high power switch-mode power supplies, industrial and automotive controllers and communication networks. Furthermore, due to its ability to support high surge current, it can have applications in motor control and power management.

Working Principle

The working principle of DTV32B-E3/45 relies upon a semiconductor-based structure in order to control the flow of electric current. The process begins when electric current enters the rectifier via the anode and is circulated through a semiconductor material. As it travels through this semiconductor material, some of the electrons from the electric current are trapped by it. This creates a depletion layer, which prevents them from being able to further flow through the semiconductor material. The trapped electrons form what is known as the diode’s junction. Because of the depletion layer, it becomes more difficult for electric current to flow in the reverse direction.

DTV32B-E3/45 rectifiers also operate through the utilization of two other principles — the forward-bias and zener breakdown. The forward bias requires an applied reverse voltage which must be present if it is to function properly. This reverse voltage causes electrons to move towards the cathode and allows the anode to become positively charged. Similarly, the zener breakdown involves a breakdown voltage whereby a reverse voltage is applied and increases with current for a certain point — past which the semiconductor junction will allow electric current to pass through.

Conclusion

In conclusion, DTV32B-E3/45 is a single diode rectifier with a high surge forward current ability. It is mainly used in engineering applications such as AC/DC power supplies and uninterruptible power supplies. Its working principle relies upon the utilization of a semiconductor-based structure, forward-bias and zener breakdown. It is designed to be reliable, efficient and cost-effective, delivering optimal performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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