DXT13003DG-13 Discrete Semiconductor Products |
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Allicdata Part #: | DXT13003DG-13DITR-ND |
Manufacturer Part#: |
DXT13003DG-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 450V 1.3A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 450V 1.3A 4MHz 700mW ... |
DataSheet: | DXT13003DG-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.3A |
Voltage - Collector Emitter Breakdown (Max): | 450V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 250mA, 1A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 16 @ 500mA, 2V |
Power - Max: | 700mW |
Frequency - Transition: | 4MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
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- Transistors - Bipolar (BJT) - Single
TheDXt13003DG-13 single bipolar transistor is a device that is commonly used in many of today’s electronic circuit designs. It is a small, low-power transistor that is designed to bridge between two input signals and provide a regulated current output. The device is used in a variety of applications including mobile phones, portable audio equipment, and electronic games.
DXT13003DG-13 transistors utilize a 3-layer base region that is designed to reduce the amount of free charge carriers in the base region. This decreases the base current and minimizes power dissipation, making it an excellent choice for low-power applications. In addition, the device also utilizes a two-stage base current current transfer ratio that is well suited for audio applications, as well as numerous other switching applications.
At the heart of the DXT13003DG-13 is it’s working principle. The device is a bipolar junction transistor, or a BJT, which means that it uses electron flow to amplify an input signal. In order to do this, the base-emitter junction of the transistor is forward biased, which allows electrons to flow in the base-emitter bias. This causes a current flow in the base due to electron migration, as well as a current flow in the collector due to electron recombination. The result of this is an amplification or gain in the output signal.
The DXT13003DG-13 transistor is often used in a variety of different applications. It’s most common use is to amplify signals from sensors or other analog sources. The device is also used to control a variety of different electrical components, such as relays, switches, and motors. Additionally, the device is often the choice for the power amplifier stages in multimedia equipment and audio systems.
All in all, the DXT13003DG-13 is a great device for any application requiring low power and low voltage operation. It’s 3-layer base region and two-stage current transfer ratio allow it to operate efficiently and reduce power dissipation. The device’s working principle based on electron flow also allows it to provide excellent amplification and gain in many applications. Therefore, the DXT13003DG-13 is sure to remain a popular choice among engineers for low-power, low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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