DXT5551P5-13 Discrete Semiconductor Products |
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Allicdata Part #: | DXT5551P5-13TR-ND |
Manufacturer Part#: |
DXT5551P5-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 160V 0.6A POWERDI5 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2.2... |
DataSheet: | DXT5551P5-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 2.25W |
Frequency - Transition: | 130MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI™ 5 |
Base Part Number: | DXT5551 |
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DXT5551P5-13 is a bipolar all-through transistor, also known as BJT. It is designed to be used in a wide variety of applications, particularly those incorporating switching or amplifying of electrical signals. This series of transistors has an extremely low operating voltage and lower collector-emitter saturation voltage, making them ideal for use in low-voltage circuits. They also feature excellent temperature stability and a wide range of collector current capabilities. These transistors are perfect for applications such as motor control, inverter drives, and general-purpose digital circuits.
As with all BJT transistors, the DXT5551P5-13 is a three-terminal semiconductor device, featuring a collector, base, and emitter. The base-emitter junction is reverse-biased, meaning that current will not flow through it when the transistor is in the off state. To turn it on, the base-emitter junction is forward biased and current will flow, allowing current to be transferred from the collector to the emitter. This transfer is determined by the current gain of the transistor, and depends on the load connected to the emitter as well as the bias voltage applied to the base-emitter junction.
The DXT5551P5-13 has a maximum voltage rating of 50V and a maximum current rating of 400mA. It is capable of withstanding reverse-voltage applications up to 100V, giving it a wide variety of uses. In addition, this transistor offers excellent thermal tracking and stability, making it suitable for high-speed switching applications.The wide range of collector current ratings, from 100mA to 400mA, makes this transistor an ideal choice for many different projects and applications.
The most important characteristics of the DXT5551P5-13 are its speed, low saturation voltage, and low operating voltage. With its fast switching speed, the transistor can rapidly change states to control the flow of current, thus allowing for precise control of the load. In addition, the low saturation voltage allows for minimal power dissipation and improved efficiency, while the low operating voltage ensures that the DXT5551P5-13 will be compatible with most voltage levels.
The DXT5551P5-13 is an ideal choice for many applications. It is particularly well-suited to motor control, inverter drives, and general-purpose digital circuits. Its fast switching speed and low voltage consumption make it perfect for low-voltage applications. Additionally, its temperature stability and wide collector current capabilities make it a great choice for projects and applications requiring precise control of current. This series of transistors is sure to be a popular choice for designers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DXT5551-13 | Diodes Incor... | -- | 1000 | TRANS NPN 160V 0.6A SOT89... |
DXT5551P5-13 | Diodes Incor... | -- | 1000 | TRANS NPN 160V 0.6A POWER... |
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