DXTN07100BP5-13 Allicdata Electronics

DXTN07100BP5-13 Discrete Semiconductor Products

Allicdata Part #:

DXTN07100BP5-13DITR-ND

Manufacturer Part#:

DXTN07100BP5-13

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 100V 2A POWERDI5
More Detail: Bipolar (BJT) Transistor NPN 100V 2A 175MHz 740mW ...
DataSheet: DXTN07100BP5-13 datasheetDXTN07100BP5-13 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.15904
10000 +: $ 0.15315
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 740mW
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Description

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The DXTN07100BP5-13 is a NPN Silicon transistor from Infineon Technologies. It is a single channel, PNP silicon transistor with an integrated protection diode which is often used in circuits demanding high current densities and efficiencies. The DXTN07100BP5-13 is designed to provide reliable high power performance and is widely used in a variety of applications, such as power supply and power management, mobile communication infrastructure and automotive power electronics.

The DXTN07100BP5-13 NPN Silicon transistor is capable of withstanding peak currents up to 1A and can exceed 2A under quick time-on conditions. Its collector-emitter voltage breakdown is 50V which makes it suitable for many power switching applications. It is capable of achieving up to 50W of delivered power when mounted on a heatsink.

The DXTN07100BP5-13 NPN Silicon transistor is a three-terminal device that consists of an emitter, base, and collector. It relies on the fact that by applying appropriate electric current to the base of an NPN transistor, electric current flows from the collector to the emitter. This is because the transistor is a semiconductor device, which means that it can regulate electron flow in its circuitry. A transistor must supply the base with current to begin conducting, and when current flows through the base, current flows from the collector to the emitter in a much larger magnitude.

The DXTN07100BP5-13 NPN Silicon transistor is ideal for many applications, such as powering high-speed logic circuits, amplifying low-frequency signals, controlling high-voltage loads, and driving power LEDs among others. It has a low rise time of 5ns, allowing it to be used in pulse-width modulated circuits such as power supply and motor controllers.

The DXTN07100BP5-13 NPN Silicon transistor is an excellent choice for high-power applications due to its high Curie frequency and high-current handling capabilities. Additionally, the thermal resistors it contains help to reduce temperature, ensuring that it is operating at an optimal temperature. Its integrated protection diode helps protect the device from any over-voltage, as well as preventing ESD events and brief current spikes, thus reducing the chances of circuit failure. This is especially important in today’s complex circuit designs, where reliability is paramount.

Bipolar transistors, such as the DXTN07100BP5-13, are widely used across all industries because of their low cost, high performance, and reliable operation. They are convenient because they are small, have high current and voltage capabilities, and provide electrical insulation between the power source and the load circuit. Additionally, they can drive loads with a steady current and relatively low noise, making them a good choice for powering all kinds of appliances, from TVs and stereos to smart home devices and computers.

The DXTN07100BP5-13 NPN Silicon transistor is a robust and reliable device that is perfect for use in a wide range of applications. Thanks to its integrated protection diode, high current and voltage handling capability, and low thermal resistance, it is capable of delivering up to 50W of delivered power, making it a great choice for high-power applications such as mobile communication and power supply systems.

The specific data is subject to PDF, and the above content is for reference

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