DXTP03200BP5-13 Discrete Semiconductor Products |
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Allicdata Part #: | DXTP03200BP5-13DITR-ND |
Manufacturer Part#: |
DXTP03200BP5-13 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 200V 2A POWERDI5 |
More Detail: | Bipolar (BJT) Transistor PNP 200V 2A 105MHz 3.2W S... |
DataSheet: | DXTP03200BP5-13 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.18711 |
10000 +: | $ 0.18018 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 200V |
Vce Saturation (Max) @ Ib, Ic: | 275mV @ 400mA, 2A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1A, 5V |
Power - Max: | 3.2W |
Frequency - Transition: | 105MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerDI™ 5 |
Supplier Device Package: | PowerDI™ 5 |
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.The DXTP03200BP5-13 is a type of single bipolar transistor developed by On Semiconductor. It operates in the NPN transistor mode as a general-purpose transistor. The device is designed to provide wide bandgap coverage and low voltage operation. Specifically, the DXTP03200BP5-13 is suitable for amplifying and switching applications requiring a maximum collector current of 200mA.
Overview of the DXTP03200BP5-13:
- Manufacturer: On Semiconductor
- Type: NPN single bipolar transistor
- Maximum collector current: 200mA
- Power dissipation: 5W
- Collector-emitter voltage: up to 85V
Application Fields:
Due to its high current capability and wide bandgap coverage, the DXTP03200BP5-13 can be used in a number of different applications. In particular, it is ideal for applications that require low voltage operation, such as DC-DC converters, battery chargers, and LED lighting. Other applications include audio amplifiers, LED dimmers, and current limiters.
Working Principle:
The DXTP03200BP5-13 is a type of NPN transistor, which means that it is a current-controlled current source (ACS). As such, it is capable of providing a current flow between its collector and emitter terminals when a current is applied to the base terminal. The internal structure of this type of transistor involves three layers of semiconductor, the base, collector, and emitter.
At its most basic, the DXTP03200BP5-13 works by allowing electrons to flow from the emitter to the collector when a current is applied to the base. This process is known as amplification, as the current flow is amplified from the base to the collector. When no current is applied to the base, the transistor is effectively \'off\', and no current flows.
Because the DXTP03200BP5-13 has a wide bandgap, it is able to provide a high level of current gain and enable fast switching actions. This makes the device ideal for applications that require a large current flow with fast switching action, such as in DC-DC converters.
Conclusion:
The DXTP03200BP5-13 is a type of single bipolar transistor developed by On Semiconductor. It operates in the NPN transistor mode as a general-purpose transistor and is suitable for amplifying and switching applications. Due to its high current capability and wide bandgap coverage, it is ideal for applications that require low voltage operation, such as DC-DC converters, battery chargers, LED lighting, audio amplifiers, LED dimmers, and current limiters.
The DXTP03200BP5-13 works by allowing electrons to flow from the emitter to the collector when a current is applied to the base. This process known as amplification, as the current flow is amplified from the base to the collector. The device is able to provide a high level of current gain and enable fast switching actions, making it suitable for switching and power applications.
The specific data is subject to PDF, and the above content is for reference
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