DZ23C2V7-E3-18 Allicdata Electronics
Allicdata Part #:

DZ23C2V7-E3-18-ND

Manufacturer Part#:

DZ23C2V7-E3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 2.7V 300MW SOT23
More Detail: Zener Diode Array 1 Pair Common Cathode 2.7V 300mW...
DataSheet: DZ23C2V7-E3-18 datasheetDZ23C2V7-E3-18 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
10000 +: $ 0.02587
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Configuration: 1 Pair Common Cathode
Voltage - Zener (Nom) (Vz): 2.7V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 83 Ohms
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Description

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Introduction To DZ23C2V7-E3-18

The DZ23C2V7-E3-18 is a Zener diode array from Diodes Incorporated and is used to suppress high-voltage, high-speed transients. It provides improved design flexibility, reducing the need for multiple component solutions. The DZ23C2V7-E3-18 is a compact dual channel array composed of 7 individual Zener diodes connected in series to form an 18V Zener voltage value.

Applications Of DZ23C2V7-E3-18

The DZ23C2V7-E3-18 is ideal for applications requiring transient protection and noise elimination in high-voltage, high-speed circuits. It is suitable for automotive, consumer, industrial, computer and communications applications. This small size device enables manufacturers to save board space, thus reducing component count, component cost, and final product cost. Additionally, its internal shunt impedance provides low forward voltage drop, resulting in low power loss. The DZ23C2V7-E3-18 is also available in a RoHS/Green/Lead(Pb)-free compliant package.

Working Principle Of DZ23C2V7-E3-18

The DZ23C2V7-E3-18 comprises of 7 individual Zener diodes. Each diode has its own junction to valley breakdown voltage because of its internal silicon engineering. When the applied reverse voltage exceeds the junction to valley breakdown voltage, charge carriers are accumulated at the junction and reverse breakdown occurs. These accumulated charge carriers create a voltage drop which is equal to the Zener voltage. The leakage current of the device is very low and the power dissipation of the device is also lower than other Zener devices.

In normal operation, the voltage across each diode is equal to the Zener voltage of the diode, thereby creating a total voltage drop of 18V. When the transient voltage rises above the 18V threshold, the DZ23C2V7-E3-18 starts to conduct, shunting the high voltage away from the protected circuits and lowering the voltage to safe levels. The current entering into the protected circuit is limited to the maximum rated current of the DZ23C2V7-E3-18, thus providing transient protection against over-voltage.

Additionally, the DZ23C2V7-E3-18 offers an integrated junction capacitance which suppresses EMI/Noise across the active input terminals. This reduces the probability of noise-sensitive components being disturbed and results in better system performance.

Conclusion on DZ23C2V7-E3-18

The DZ23C2V7-E3-18 is a robust 7-device array capable of providing improved protection and noise elimination through the integration of a voltage limiting circuit, a junction capacitance, and low power losses when compared to the other types of transient protection circuit devices. Finally, its small size and low-cost nature makes it an ideal choice for manufacturers when it comes to saving board space, reducing component costs and delivering reliable protection.

The specific data is subject to PDF, and the above content is for reference

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