DZ23C4V7-G3-08

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DZ23C4V7-G3-08 is an integrated flat array of Zener diodes with a high reverse voltage of 4V, low forward current of 0.5mA, and low thermal resistance junction to ambient (RJA) of 10C/W. This diode array is specifically designed for high-voltage circuit protection and as a high impedance buffer for controlling incremental voltages with excellent FET characteristics.

DZ23C4V7-G3-08 application fields include:

• Voltage regulation: DZ23C4V7-G3-08 can be used for voltage regulation and control, with low forward current and high reverse voltage characteristics, providing excellent control performance and stability.
• Circuit protection: The high impedance buffer of DZ23C4V7-G3-08 can be used in voltage protection circuits to absorb momentary overvoltage conditions, providing high impedance and effective protection.
• Power supplies: DZ23C4V7-G3-08 can be used in DC-DC converters and power supply circuits to control the output voltage, reducing series of power losses.
• Cable protection: The low thermal resistance junction to ambient (RJA) of DZ23C4V7-G3-08 allows for effective protection of long-distance cables from overloads, reducing risk of damage.
• Automotive applications: This product can be used for voltage regulation in automotive circuits and provide effective protection against transient voltages.

The working principle of DZ23C4V7-G3-08 is best described as a diode bridge configuration between the anode and cathode of the diodes using their different characteristics. The anode is connected to the conventional positive terminal and the cathode is connected to the conventional negative terminal. When the voltage across the anode and cathode of the diodes reaches a certain value, the diodes will begin to pass current. The Zener diodes have a high-voltage breakdown characteristic, while the general diodes have a low-voltage breakdown characteristic. The breakdown voltage of the diode bridge is determined by the characteristics of the individual diodes. Once breakover has occurred, the diodes transfer the current in the zener direction, with the Zener diode limiting the maximum voltage across the device.

The DZ23C4V7-G3-08 diode array is also designed to operate over a wide temperature range, providing consistent performance in high temperatures. The diodes are also designed to be highly reliable, boasting a range of characteristics such as high breakdown voltage, high current capability, and low forward voltage drop. The diodes have a low thermal resistance junction to ambient, allowing for effective heat dissipation and protection against overloads.

In conclusion, the DZ23C4V7-G3-08 diode array is a cost-effective solution for applications requiring high voltage drop, protection circuits and voltage regulation. The diode array has excellent FET characteristics and features a wide temperature range, high current capability and reliable operation. With its low forward current and high reverse voltage characteristics, the diode array provides excellent control performance and stability.

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