DZ2415000L Allicdata Electronics

DZ2415000L Discrete Semiconductor Products

Allicdata Part #:

DZ2415000LTR-ND

Manufacturer Part#:

DZ2415000L

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: DIODE ZENER 15V 2W TMINIP2
More Detail: Zener Diode 15V 2W ±5% Surface Mount TMiniP2-F2-B
DataSheet: DZ2415000L datasheetDZ2415000L Datasheet/PDF
Quantity: 21000
3000 +: $ 0.14397
6000 +: $ 0.13405
15000 +: $ 0.13239
Stock 21000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±5%
Power - Max: 2W
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 10V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: TMiniP2-F2-B
Base Part Number: DZ24150
Description

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DZ2415000L is the designation for polysilicon charge-storing zener diodes. This type of zener diode uses polysilicon planar construction for optimum breakdown voltage temperature stability. Polysilicon charge-storing zener diodes have a wide variety of applications such as voltage limiters, noise suppressors and transient suppressors, and are used to protect circuits from transients. The typical application of a polysilicon charge-storing zener diode is in voltage regulation and wave-shaping circuits.

The general function of a zener diode is to break down when the voltage across it reaches its breakdown voltage. A zener diode maintains a constant voltage across its terminals, allowing current to flow in either direction. Zener diodes, unlike normal rectifiers, can maintain a constant voltage under a variety of conditions. This is because of the stored charge effect.

The DZ2415000L utilizes a polysilicon layer which allows for better control of the breakdown voltage. This means that the breakdown voltage of the device is more stable with temperature, humidity and current trends. The device is designed to allow for a beneficial combination of surge handling, reversed bias stability and compliance to ESD standards.

The DZ2415000L operates in the breakdown region, which is the voltage range between the breakdown voltage and the peak reverse power rating of the device. By maintaining a specific voltage, the zener diode can be used to protect devices from hazardous current or voltage transients without the need for high voltage switching devices or large capacitors. This means that the device can be used in a wide variety of applications such as high voltage power supplies, voltage regulators and in rollover protection circuity.

The working principle of the DZ2415000L polysilicon planar zener diode works off of the leakage current that is created when voltage is applied to it. When the voltage across the diode reaches the diode\'s breakdown voltage, current begins to flow and a constant voltage is maintained across the diode. The polysilicon planar construction of the DZ2415000L allows for an increased breakdown voltage range, as well as better temperature stability for the breakdown voltage.

In summary, DZ2415000L is a polysilicon planar zener diode which is designed for use in voltage regulators and wave-shaping circuits. The voltage breakdown range of the diode is temperature stable due to the polysilicon construction, and the device is designed to provide protection from hazardous current or voltage transients without the need for high voltage switching devices or large capacitors.

The specific data is subject to PDF, and the above content is for reference

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