Allicdata Part #: | DZT3150DITR-ND |
Manufacturer Part#: |
DZT3150-13 |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 25V 5A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 5A 150MHz 1W Surf... |
DataSheet: | DZT3150-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.10742 |
5000 +: | $ 0.10049 |
12500 +: | $ 0.09356 |
25000 +: | $ 0.08870 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 4A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 250 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | DZT3150 |
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The DZT3150-13 is a high performance bipolar single transistor device with a Maximum DC Collector Current rating of 1.0A and a Collector-Emitter Voltage (Vce) of 30V. It has a high frequency gain of 1000mA/V and a breakdown voltage of 25V.
The device is often used in applications such as amplifiers, switches, and voltage regulators. It can also be used as a switching relay, a DC-DC converter, and can be found in audio systems, instrumentation and other high power equipment. In general, it is used for small signal switching, low-side and high-side switching, and current sensing.
One of the key advantages of the DZT3150-13 is its extremely low leakage current. This attribute gives it a significant advantage in applications where current leakage must be kept as low as possible, such as automotive power systems. The low leakage current and low saturation voltage also make it a good choice for circuits needing fast switching.
The working principle of the DZT3150-13 can be explained as follows: A voltage is applied to the base of the transistor, which, in turn, controls the amount of current flowing through the collector-emitter circuit. The base-emitter junction is forward biased, allowing electrons to flow from the emitter to the base. The increase in current causes a proportionate increase in the collector current when the base-collector junction is reverse biased, allowing holes to flow from the collector to the base.
The DZT3150-13 is capable of operation at high current and high voltage, making it an ideal choice for many medium power applications. It can also be used in many low power applications, such as signal switching and current sensing. It has an extremely low leakage current and low saturation voltage, making it a good choice for circuits needing fast switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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DZT3150-13 | Diodes Incor... | 0.12 $ | 1000 | TRANS NPN 25V 5A SOT-223B... |
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