DZT853-13

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DZT853-13 is a kind of transistor. It belongs to Single Bipolar Junction Transistors (BJT) and its polarity is NPN. It is suitable for applications that require low noise, such as amplifiers and oscillators.

The DZT853-13 has a collector-base voltage of 60V and the maximum power dissipation of 625mW. It is composed of two PN junctions and three layers, namely the emitter, the base and the collector. The emitter is connected to the negative terminal of the power supply, the base is connected to the output and the collector is connected to the positive terminal of the power supply.

The DZT853-13 can be used for about 400mA current in active regions. In this way, it can provide a reasonable gain as well as low noise operation. The operation process of the device can be divided into three parts, which are forward active, cut-off and reverse active regions.

In the forward active region, electrons from the emitter will form a junction with the holes in the collector, thus leaving a current flow. The base current Ib is very low, so the effect of the base on the transistor is minimal. Meanwhile, the collector-emitter voltage Vce is very low which indicates a high gain between the collector and emitter currents.

In the cut-off region, The current flow between the collector and emitter is blocked as the base current goes to zero. Hence, the collector current Ik is equal to zero. This state is useful for switching applications where the power can be turned off completely.

In the reverse active region, the current flow between the collector and emitter is very low due to the fact that the base current is high and this causes the voltage across the collector and emitter to become positive. Hence, the collector current Ik is very small, which makes it ideal for use in applications where the power should be limited.

The DZT853-13 is a very useful device for many applications, such as amplifiers, oscillators and switching. It can provide low noise and reasonable gain. It also has a collector-base voltage of 60V and a maximum power dissipation of 625mW. It can be used for about 400mA current in active regions and can be turned off completely in the cut-off region. The reverse active region is useful for applications where the power should be limited.

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