DZT955-13

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	PNP
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	140V
Vce Saturation (Max) @ Ib, Ic:	370mV @ 300mA, 3A
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 5V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223
Base Part Number:	DZT955

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Introduction

The DZT955-13 is a single bipolar junction transistor (BJT) device. It is designed to provide superior performance in applications requiring high switching speed, low power consumption and low noise. This transistor is ideal for use in switched-mode power supplies (SMPS) and relay circuits. In this article, we will be discussing the application field and working principle of the DZT955-13.

Application Field

The DZT955-13 is designed for use in a number of different applications. The first of these is switched-mode power supplies (SMPS). SMPS are used in virtually every electronic device, from computers and televisions to medical equipment and industrial machinery. The DZT955-13 provides superior performance in these applications due to its high switching speed, low power consumption and low noise.The DZT955-13 can also be used in relay circuits. Relay circuits are used to control the voltage and current of a power source in order to operate a device. The DZT955-13 can be used to control the current delivered by a relay circuit, ensuring accuracy and reliability.The DZT955-13 can also be used in any other application that requires a reliable and high-speed switching device.

Working Principle

The DZT955-13 is a single bipolar junction transistor (BJT), which means that it has two p-type semiconductor layers and one n-type semiconductor layer. The n-type layer acts as the collector, while the p-type layers act as the base and the emitter. A voltage applied to the base will cause electrons to flow from the base to the collector and then to the emitter. The current flowing between the base and collector is controlled by the voltage applied to the base.The DZT955-13 is designed to operate at frequencies between 1MHz and 5MHz, which makes it ideal for high-speed switching applications. The device also features a low power consumption, which makes it suitable for use in power-sensitive applications. Additionally, the device features a high thermal resistance and low noise, making it ideal for use in noise-sensitive circuit designs.

Conclusion

The DZT955-13 is a single bipolar junction transistor (BJT) device designed to provide superior performance in applications requiring high switching speed, low power consumption and low noise. This device is ideal for use in switched-mode power supplies (SMPS) and relay circuits. The DZT955-13 is also suitable for any other application that requires a reliable and high-speed switching device. The device is designed to operate at frequencies between 1MHz and 5MHz and features a low power consumption, high thermal resistance and low noise.

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