E-L6385D013TR Allicdata Electronics

E-L6385D013TR Integrated Circuits (ICs)

Allicdata Part #:

497-4577-2-ND

Manufacturer Part#:

E-L6385D013TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC DRIVER HI/LO SIDE HV 8-SOIC
More Detail: Half-Bridge Gate Driver IC Inverting 8-SO
DataSheet: E-L6385D013TR datasheetE-L6385D013TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 400mA, 650mA
Base Part Number: L6385
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 50ns, 30ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting
Series: --
Logic Voltage - VIL, VIH: 1.5V, 3.6V
Voltage - Supply: 17V (Max)
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PMIC - Gate Drivers

The E-L6385D013TR is a gate driver integrated circuit designed to help drive the power MOSFET or IGBT in the required configuration without the need for external components. The main application of this integrated circuit is the power electronics for solar photovoltaic system, lighting, home appliance, etc. The working principle of the integrated circuit is to receive the control signal from its enable pin and provide a pulse width modulation control of the voltage applied to the gate of the power MOSFET or IGBT.

Application Field of the E-L6385D013TR

This integrated circuit is mainly applicable for the high-performance power electronic equipment. In the solar photovoltaic systems, it can drive the power MOSFET\'s gate voltage to the selected voltage level after receiving the driving signal. In addition, it is also applied in lighting, home appliance, motor, etc. which tends to use low turn-on and turn-off frequency and require high temperature operating.

Working Principle of the E-L6385D013TR

The E-L6385D013TR integrated circuit consists of two parts: a gate driver and a gate-level amplifier. The gate driver receives and provides an amplified voltage level for the gate of the power MOSFET or IGBT. Once the driver receives the control signal from its enable pin, it will provide the pulse width modulation control of the voltage applied to the gate of the power MOSFET or IGBT, thus providing the required output voltage necessary to drive the gate of the power MOSFET or IGBT.

The gate-level amplifier of this integrated circuit is responsible for providing the low impedance to the gate of the power MOSFET or IGBT, which is necessary for steady operating. Moreover, the integrated circuit is equipped with internal under-voltage protection and high-side current shut-down circuit which can help to protect the power MOSFET or IGBT from overloading and overheating.

Conclusion

In conclusion, the E-L6385D013TR integrated circuit, with its main application in the power electronics for solar photovoltaic, lighting and home appliance has excellent performance for low turn-on and turn-off frequency, high temperature operating, low impedance to the gate of the power MOSFET or IGBT, internal under-voltage protection and high-side current shut-down circuit. All these features make the integrated circuit a great choice for power electronic applications.

The specific data is subject to PDF, and the above content is for reference

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