E-L6385D013TR Integrated Circuits (ICs) |
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| Allicdata Part #: | 497-4577-2-ND |
| Manufacturer Part#: |
E-L6385D013TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | STMicroelectronics |
| Short Description: | IC DRIVER HI/LO SIDE HV 8-SOIC |
| More Detail: | Half-Bridge Gate Driver IC Inverting 8-SO |
| DataSheet: | E-L6385D013TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Current - Peak Output (Source, Sink): | 400mA, 650mA |
| Base Part Number: | L6385 |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 50ns, 30ns |
| High Side Voltage - Max (Bootstrap): | 600V |
| Input Type: | Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 1.5V, 3.6V |
| Voltage - Supply: | 17V (Max) |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Half-Bridge |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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PMIC - Gate Drivers
The E-L6385D013TR is a gate driver integrated circuit designed to help drive the power MOSFET or IGBT in the required configuration without the need for external components. The main application of this integrated circuit is the power electronics for solar photovoltaic system, lighting, home appliance, etc. The working principle of the integrated circuit is to receive the control signal from its enable pin and provide a pulse width modulation control of the voltage applied to the gate of the power MOSFET or IGBT.
Application Field of the E-L6385D013TR
This integrated circuit is mainly applicable for the high-performance power electronic equipment. In the solar photovoltaic systems, it can drive the power MOSFET\'s gate voltage to the selected voltage level after receiving the driving signal. In addition, it is also applied in lighting, home appliance, motor, etc. which tends to use low turn-on and turn-off frequency and require high temperature operating.
Working Principle of the E-L6385D013TR
The E-L6385D013TR integrated circuit consists of two parts: a gate driver and a gate-level amplifier. The gate driver receives and provides an amplified voltage level for the gate of the power MOSFET or IGBT. Once the driver receives the control signal from its enable pin, it will provide the pulse width modulation control of the voltage applied to the gate of the power MOSFET or IGBT, thus providing the required output voltage necessary to drive the gate of the power MOSFET or IGBT.
The gate-level amplifier of this integrated circuit is responsible for providing the low impedance to the gate of the power MOSFET or IGBT, which is necessary for steady operating. Moreover, the integrated circuit is equipped with internal under-voltage protection and high-side current shut-down circuit which can help to protect the power MOSFET or IGBT from overloading and overheating.
Conclusion
In conclusion, the E-L6385D013TR integrated circuit, with its main application in the power electronics for solar photovoltaic, lighting and home appliance has excellent performance for low turn-on and turn-off frequency, high temperature operating, low impedance to the gate of the power MOSFET or IGBT, internal under-voltage protection and high-side current shut-down circuit. All these features make the integrated circuit a great choice for power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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E-L6385D013TR Datasheet/PDF