E-L6569

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Driven Configuration:	Half-Bridge
Channel Type:	Synchronous
Number of Drivers:	2
Gate Type:	IGBT, N-Channel MOSFET
Voltage - Supply:	10 V ~ 16.6 V
Logic Voltage - VIL, VIH:	--
Current - Peak Output (Source, Sink):	170mA, 270mA
Input Type:	RC Input Circuit
High Side Voltage - Max (Bootstrap):	600V
Rise / Fall Time (Typ):	--
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-Mini DIP
Base Part Number:	L6569

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The E-L6569 is a low-voltage, high-efficiency gate driver integrated circuit (IC) used in power management and control. It is capable of driving two independent gate inputs up to 5 A/channel (half-bridge configuration) and up to 3 A/channel (full-bridge configuration). The E-L6569 is designed with a wide voltage range from 4.5 V to 26 V with protection from back EMF, over-voltage and over-temperature. The IC has immense flexibility and is suitable for wide range of applications, for European automotive systems it is approved for EMC compliance according to EN-CEC60908-2 standard. The E-L6569 is a versatile device and is suitable for a variety of applications in power management and control. It can be used to drive the gates of two MOSFETs, IGBTs or the entire half-bridge and full-bridge circuits. The E-L6569 supports a wide range of gate drive voltages from 5 V to 24 V, so it can be used in high voltage applications as well. The gate current can be programmed from as low as 2 mA to 5 A for MOSFETs and IGBTs. It also has in-built protection from back EMF, over-voltage and over-temperature.In addition to driving power switches, the E-L6569 can also be used for driving various opto-couplers and hall-effect sensors. It can also be used for driving buzzers and LED indicators. Furthermore, it features two programmable timers, which can be used to generate a delay or a one-shot pulse. It also has a toggle output that can be used to latch and unlatch the output. In terms of its working principle, the E-L6569 employs a PXFMOS technology which allows it to switch high-currents quickly and efficiently. It uses two MOSFETs that are connected in parallel, but one is reversed in polarity. When the MOSFETs are driven simultaneously, the current flows through both devices and in opposite directions. Thus, when a voltage is applied to the gate of the MOSFET, the current flows in one direction only and the power switch is closed.The E-L6569 also has a mounting feature that allows it to be attached to a heatsink without the need for an insulating thermal washer. The IC has an operational temperature range from -40°C to 150°C, making it suitable for extreme usage conditions. The E-L6569 is a cost-effective solution for power management and control applications and can be used for a variety of applications. Ultimately, its primary application field is in PMIC - Gate Drivers.