E-L6569D

Linear Technology’s E-L6569D is a high-efficiency gate driver IC designed to drive both N- and P-channel MOSFETs and IGBTs. This dual output driver is optimized for digital power application requiring high-current, high efficiency gate drive with minimal output voltage drop. The E-L6569D combines an integrated high-voltage, high-speed level translator, overvoltage protection, slew-rate control, and gate-drive features. This part is ideal for supplying a large initial burst current that is sufficient to drive large-sized power MOSFETs or IGBTs.

Application Field of E-L6569D

The main application area of the E-L6569D includes switching power supplies ranging from OR-ing, hot-swap and dual output regulators, to high-efficiency DC-DC converters and multi-phase regulators. Industrial and LED lighting power supplies and server power systems can also make good use of the E-L6569D. The device is designed to withstand demanding digital power applications, providing a current capacity of up to 5A per output.

The latency for driving large FETs and IGBTs is reduced to a few nanoseconds, facilitating faster transitions and fewer overshoots that could cause soft switching misfires. The part also contains several built-in protections including undervoltage lockout (UVLO) for both channels. It provides fault protection against over-temperature and overcurrent conditions. The E-L6569D also provides dual logic inputs for a variety of applications.

Working Principle of E-L6569D

The E-L6569D consists of two high voltage gate driver outputs, a level translator, and overvoltage protection. The level translator provides optimal TTL/CMOS level shifting capability, allowing the device to drive both low and high side MOSFETs. The part can drive large mosfets and IGBTs up to 5A peak. The device also provides adjustable slew rates for optimized switching performance.

The E-L6569D also provides fault protection against over-temperature and overcurrent conditions. For over-temperature conditions, the device has a thermal shutdown feature that automatically turns off the outputs when the die temperature exceeds 140°C. It also includes an over-current protection feature that shuts off both channels when the current exceeds a programmable threshold. The part can also operate in a diode emulation or synchronous rectification mode.

In addition, the device includes two high-voltage logic level inputs, INT and EXT. The INT input is used to select between a single pulse or pulse-width modulation (PWM) input, while the EXT input is used to select between a dual pulse/PWM input. The E-L6569D also incorporates several safety features such as under voltage lockout, overvoltage protection, and current monitor for each channel.

Conclusion

The E-L6569D fromLinear Technology is a highly integrated gate driver IC designed for applications requiring high-current, high efficiency gate drives. This part combines an integrated level translator, gate-drive, overvoltage protection and other features for robust and reliable operation. Ideal for use in digital power applications, the E-L6569D features adjustable slew rates and a wide range of protections.